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Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications

Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, PDPPT-TT, and directly utilized it in both field-ef...

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Autores principales: Choi, Young Jin, Kim, Jihyun, Kim, Min Je, Ryu, Hwa Sook, Woo, Han Young, Cho, Jeong Ho, Kang, Joohoon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8000839/
https://www.ncbi.nlm.nih.gov/pubmed/33809314
http://dx.doi.org/10.3390/mi12030301
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author Choi, Young Jin
Kim, Jihyun
Kim, Min Je
Ryu, Hwa Sook
Woo, Han Young
Cho, Jeong Ho
Kang, Joohoon
author_facet Choi, Young Jin
Kim, Jihyun
Kim, Min Je
Ryu, Hwa Sook
Woo, Han Young
Cho, Jeong Ho
Kang, Joohoon
author_sort Choi, Young Jin
collection PubMed
description Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, PDPPT-TT, and directly utilized it in both field-effect transistor and non-volatile memory applications. As-synthesized PDPPT-TT was simply spin-coated on a substrate for the device fabrications. The PDPPT-TT based field-effect transistor showed ambipolar electrical transfer characteristics. Furthermore, a gold nanoparticle-embedded dielectric layer was used as a charge trapping layer for the non-volatile memory device applications. The non-volatile memory device showed clear memory window formation as applied gate voltage increases, and electrical stability was evaluated by performing retention and cycling tests. In summary, we demonstrate that a donor–acceptor-type organic semiconductor molecule shows great potential for ambipolar field-effect transistors and non-volatile memory device applications as an important class of materials.
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spelling pubmed-80008392021-03-28 Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications Choi, Young Jin Kim, Jihyun Kim, Min Je Ryu, Hwa Sook Woo, Han Young Cho, Jeong Ho Kang, Joohoon Micromachines (Basel) Communication Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, PDPPT-TT, and directly utilized it in both field-effect transistor and non-volatile memory applications. As-synthesized PDPPT-TT was simply spin-coated on a substrate for the device fabrications. The PDPPT-TT based field-effect transistor showed ambipolar electrical transfer characteristics. Furthermore, a gold nanoparticle-embedded dielectric layer was used as a charge trapping layer for the non-volatile memory device applications. The non-volatile memory device showed clear memory window formation as applied gate voltage increases, and electrical stability was evaluated by performing retention and cycling tests. In summary, we demonstrate that a donor–acceptor-type organic semiconductor molecule shows great potential for ambipolar field-effect transistors and non-volatile memory device applications as an important class of materials. MDPI 2021-03-12 /pmc/articles/PMC8000839/ /pubmed/33809314 http://dx.doi.org/10.3390/mi12030301 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) ).
spellingShingle Communication
Choi, Young Jin
Kim, Jihyun
Kim, Min Je
Ryu, Hwa Sook
Woo, Han Young
Cho, Jeong Ho
Kang, Joohoon
Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications
title Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications
title_full Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications
title_fullStr Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications
title_full_unstemmed Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications
title_short Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications
title_sort hysteresis behavior of the donor–acceptor-type ambipolar semiconductor for non-volatile memory applications
topic Communication
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8000839/
https://www.ncbi.nlm.nih.gov/pubmed/33809314
http://dx.doi.org/10.3390/mi12030301
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