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Electrolyte-Dependent Modification of Resistive Switching in Anodic Hafnia

Anodic HfO(2) memristors grown in phosphate, borate, or citrate electrolytes and formed on sputtered Hf with Pt top electrodes are characterized at fundamental and device levels. The incorporation of electrolyte species deep into anodic memristors concomitant with HfO(2) crystalline structure conser...

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Autores principales: Zrinski, Ivana, Mardare, Cezarina Cela, Jinga, Luiza-Izabela, Kollender, Jan Philipp, Socol, Gabriel, Minenkov, Alexey, Hassel, Achim Walter, Mardare, Andrei Ionut
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8001223/
https://www.ncbi.nlm.nih.gov/pubmed/33800460
http://dx.doi.org/10.3390/nano11030666
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author Zrinski, Ivana
Mardare, Cezarina Cela
Jinga, Luiza-Izabela
Kollender, Jan Philipp
Socol, Gabriel
Minenkov, Alexey
Hassel, Achim Walter
Mardare, Andrei Ionut
author_facet Zrinski, Ivana
Mardare, Cezarina Cela
Jinga, Luiza-Izabela
Kollender, Jan Philipp
Socol, Gabriel
Minenkov, Alexey
Hassel, Achim Walter
Mardare, Andrei Ionut
author_sort Zrinski, Ivana
collection PubMed
description Anodic HfO(2) memristors grown in phosphate, borate, or citrate electrolytes and formed on sputtered Hf with Pt top electrodes are characterized at fundamental and device levels. The incorporation of electrolyte species deep into anodic memristors concomitant with HfO(2) crystalline structure conservation is demonstrated by elemental analysis and atomic scale imaging. Upon electroforming, retention and endurance tests are performed on memristors. The use of borate results in the weakest memristive performance while the citrate demonstrates clear superior memristive properties with multilevel switching capabilities and high read/write cycling in the range of 10(6). Low temperature heating applied to memristors shows a direct influence on their behavior mainly due to surface release of water. Citrate-based memristors show remarkable properties independent on device operation temperatures up to 100 °C. The switching dynamic of anodic HfO(2) memristors is discussed by analyzing high resolution transmission electron microscope images. Full and partial conductive filaments are visualized, and apart from their modeling, a concurrency of filaments is additionally observed. This is responsible for the multilevel switching mechanism in HfO(2) and is related to device failure mechanisms.
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spelling pubmed-80012232021-03-28 Electrolyte-Dependent Modification of Resistive Switching in Anodic Hafnia Zrinski, Ivana Mardare, Cezarina Cela Jinga, Luiza-Izabela Kollender, Jan Philipp Socol, Gabriel Minenkov, Alexey Hassel, Achim Walter Mardare, Andrei Ionut Nanomaterials (Basel) Article Anodic HfO(2) memristors grown in phosphate, borate, or citrate electrolytes and formed on sputtered Hf with Pt top electrodes are characterized at fundamental and device levels. The incorporation of electrolyte species deep into anodic memristors concomitant with HfO(2) crystalline structure conservation is demonstrated by elemental analysis and atomic scale imaging. Upon electroforming, retention and endurance tests are performed on memristors. The use of borate results in the weakest memristive performance while the citrate demonstrates clear superior memristive properties with multilevel switching capabilities and high read/write cycling in the range of 10(6). Low temperature heating applied to memristors shows a direct influence on their behavior mainly due to surface release of water. Citrate-based memristors show remarkable properties independent on device operation temperatures up to 100 °C. The switching dynamic of anodic HfO(2) memristors is discussed by analyzing high resolution transmission electron microscope images. Full and partial conductive filaments are visualized, and apart from their modeling, a concurrency of filaments is additionally observed. This is responsible for the multilevel switching mechanism in HfO(2) and is related to device failure mechanisms. MDPI 2021-03-08 /pmc/articles/PMC8001223/ /pubmed/33800460 http://dx.doi.org/10.3390/nano11030666 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) ).
spellingShingle Article
Zrinski, Ivana
Mardare, Cezarina Cela
Jinga, Luiza-Izabela
Kollender, Jan Philipp
Socol, Gabriel
Minenkov, Alexey
Hassel, Achim Walter
Mardare, Andrei Ionut
Electrolyte-Dependent Modification of Resistive Switching in Anodic Hafnia
title Electrolyte-Dependent Modification of Resistive Switching in Anodic Hafnia
title_full Electrolyte-Dependent Modification of Resistive Switching in Anodic Hafnia
title_fullStr Electrolyte-Dependent Modification of Resistive Switching in Anodic Hafnia
title_full_unstemmed Electrolyte-Dependent Modification of Resistive Switching in Anodic Hafnia
title_short Electrolyte-Dependent Modification of Resistive Switching in Anodic Hafnia
title_sort electrolyte-dependent modification of resistive switching in anodic hafnia
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8001223/
https://www.ncbi.nlm.nih.gov/pubmed/33800460
http://dx.doi.org/10.3390/nano11030666
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