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Electrolyte-Dependent Modification of Resistive Switching in Anodic Hafnia
Anodic HfO(2) memristors grown in phosphate, borate, or citrate electrolytes and formed on sputtered Hf with Pt top electrodes are characterized at fundamental and device levels. The incorporation of electrolyte species deep into anodic memristors concomitant with HfO(2) crystalline structure conser...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8001223/ https://www.ncbi.nlm.nih.gov/pubmed/33800460 http://dx.doi.org/10.3390/nano11030666 |
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author | Zrinski, Ivana Mardare, Cezarina Cela Jinga, Luiza-Izabela Kollender, Jan Philipp Socol, Gabriel Minenkov, Alexey Hassel, Achim Walter Mardare, Andrei Ionut |
author_facet | Zrinski, Ivana Mardare, Cezarina Cela Jinga, Luiza-Izabela Kollender, Jan Philipp Socol, Gabriel Minenkov, Alexey Hassel, Achim Walter Mardare, Andrei Ionut |
author_sort | Zrinski, Ivana |
collection | PubMed |
description | Anodic HfO(2) memristors grown in phosphate, borate, or citrate electrolytes and formed on sputtered Hf with Pt top electrodes are characterized at fundamental and device levels. The incorporation of electrolyte species deep into anodic memristors concomitant with HfO(2) crystalline structure conservation is demonstrated by elemental analysis and atomic scale imaging. Upon electroforming, retention and endurance tests are performed on memristors. The use of borate results in the weakest memristive performance while the citrate demonstrates clear superior memristive properties with multilevel switching capabilities and high read/write cycling in the range of 10(6). Low temperature heating applied to memristors shows a direct influence on their behavior mainly due to surface release of water. Citrate-based memristors show remarkable properties independent on device operation temperatures up to 100 °C. The switching dynamic of anodic HfO(2) memristors is discussed by analyzing high resolution transmission electron microscope images. Full and partial conductive filaments are visualized, and apart from their modeling, a concurrency of filaments is additionally observed. This is responsible for the multilevel switching mechanism in HfO(2) and is related to device failure mechanisms. |
format | Online Article Text |
id | pubmed-8001223 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-80012232021-03-28 Electrolyte-Dependent Modification of Resistive Switching in Anodic Hafnia Zrinski, Ivana Mardare, Cezarina Cela Jinga, Luiza-Izabela Kollender, Jan Philipp Socol, Gabriel Minenkov, Alexey Hassel, Achim Walter Mardare, Andrei Ionut Nanomaterials (Basel) Article Anodic HfO(2) memristors grown in phosphate, borate, or citrate electrolytes and formed on sputtered Hf with Pt top electrodes are characterized at fundamental and device levels. The incorporation of electrolyte species deep into anodic memristors concomitant with HfO(2) crystalline structure conservation is demonstrated by elemental analysis and atomic scale imaging. Upon electroforming, retention and endurance tests are performed on memristors. The use of borate results in the weakest memristive performance while the citrate demonstrates clear superior memristive properties with multilevel switching capabilities and high read/write cycling in the range of 10(6). Low temperature heating applied to memristors shows a direct influence on their behavior mainly due to surface release of water. Citrate-based memristors show remarkable properties independent on device operation temperatures up to 100 °C. The switching dynamic of anodic HfO(2) memristors is discussed by analyzing high resolution transmission electron microscope images. Full and partial conductive filaments are visualized, and apart from their modeling, a concurrency of filaments is additionally observed. This is responsible for the multilevel switching mechanism in HfO(2) and is related to device failure mechanisms. MDPI 2021-03-08 /pmc/articles/PMC8001223/ /pubmed/33800460 http://dx.doi.org/10.3390/nano11030666 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) ). |
spellingShingle | Article Zrinski, Ivana Mardare, Cezarina Cela Jinga, Luiza-Izabela Kollender, Jan Philipp Socol, Gabriel Minenkov, Alexey Hassel, Achim Walter Mardare, Andrei Ionut Electrolyte-Dependent Modification of Resistive Switching in Anodic Hafnia |
title | Electrolyte-Dependent Modification of Resistive Switching in Anodic Hafnia |
title_full | Electrolyte-Dependent Modification of Resistive Switching in Anodic Hafnia |
title_fullStr | Electrolyte-Dependent Modification of Resistive Switching in Anodic Hafnia |
title_full_unstemmed | Electrolyte-Dependent Modification of Resistive Switching in Anodic Hafnia |
title_short | Electrolyte-Dependent Modification of Resistive Switching in Anodic Hafnia |
title_sort | electrolyte-dependent modification of resistive switching in anodic hafnia |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8001223/ https://www.ncbi.nlm.nih.gov/pubmed/33800460 http://dx.doi.org/10.3390/nano11030666 |
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