High Gain and Broadband Absorption Graphene Photodetector Decorated with Bi(2)Te(3) Nanowires

A graphene photodetector decorated with Bi(2)Te(3) nanowires (NWs) with a high gain of up to 3 × 10(4) and wide bandwidth window (400–2200 nm) has been demonstrated. The photoconductive gain was improved by two orders of magnitude compared to the gain of a photodetector using a graphene/Bi(2)Te(3) n...

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Detalles Bibliográficos
Autores principales: Yoo, Tae Jin, Kim, Wan Sik, Chang, Kyoung Eun, Kim, Cihyun, Kwon, Min Gyu, Jo, Ji Young, Lee, Byoung Hun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8002706/
https://www.ncbi.nlm.nih.gov/pubmed/33802969
http://dx.doi.org/10.3390/nano11030755
Descripción
Sumario:A graphene photodetector decorated with Bi(2)Te(3) nanowires (NWs) with a high gain of up to 3 × 10(4) and wide bandwidth window (400–2200 nm) has been demonstrated. The photoconductive gain was improved by two orders of magnitude compared to the gain of a photodetector using a graphene/Bi(2)Te(3) nanoplate junction. Additionally, the position of photocurrent generation was investigated at the graphene/Bi(2)Te(3) NWs junction. Eventually, with low bandgap Bi(2)Te(3) NWs and a graphene junction, the photoresponsivity improved by 200% at 2200 nm (~0.09 mA/W).

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