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High Gain and Broadband Absorption Graphene Photodetector Decorated with Bi(2)Te(3) Nanowires
A graphene photodetector decorated with Bi(2)Te(3) nanowires (NWs) with a high gain of up to 3 × 10(4) and wide bandwidth window (400–2200 nm) has been demonstrated. The photoconductive gain was improved by two orders of magnitude compared to the gain of a photodetector using a graphene/Bi(2)Te(3) n...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8002706/ https://www.ncbi.nlm.nih.gov/pubmed/33802969 http://dx.doi.org/10.3390/nano11030755 |
Sumario: | A graphene photodetector decorated with Bi(2)Te(3) nanowires (NWs) with a high gain of up to 3 × 10(4) and wide bandwidth window (400–2200 nm) has been demonstrated. The photoconductive gain was improved by two orders of magnitude compared to the gain of a photodetector using a graphene/Bi(2)Te(3) nanoplate junction. Additionally, the position of photocurrent generation was investigated at the graphene/Bi(2)Te(3) NWs junction. Eventually, with low bandgap Bi(2)Te(3) NWs and a graphene junction, the photoresponsivity improved by 200% at 2200 nm (~0.09 mA/W). |
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