Enhanced Electrical Performance of Monolayer MoS(2) with Rare Earth Element Sm Doping

Rare earth (RE) element-doped two-dimensional (2D) transition metal dichalcogenides (TMDCs) with applications in luminescence and magnetics have received considerable attention in recent years. To date, the effect of RE element doping on the electronic properties of monolayer 2D-TMDCs remains unanswered due to challenges including the difficulty of achieving valid monolayer doping and introducing RE elements with distinct valence and atomic configurations. Herein, we report a unique strategy to grow the Sm-doped monolayer MoS(2) film by using an atmospheric pressure chemical vapor deposition method with the substrate face down on top of the growth source. A stable monolayer triangular Sm-doped MoS(2) was achieved. The threshold voltage of an Sm-doped MoS(2)-based field effect transistor (FET) moved from −12 to 0 V due to the p-type character impurity state introduced by Sm ions in monolayer MoS(2). Additionally, the electrical performance of the monolayer MoS(2)-based FET was improved by RE element Sm doping, including a 500% increase of the on/off current ratio and a 40% increase of the FET’s mobility. The electronic property enhancement resulted from Sm doping MoS(2), which led internal lattice strain and changes in Fermi energy levels. These findings provide a general approach to synthesize RE element-doped monolayer 2D-TMDCs and to enrich their applications in electrical devices.