Filling Exciton Trap-States in Two-Dimensional Tungsten Disulfide (WS(2)) and Diselenide (WSe(2)) Monolayers

Two-dimensional transition metal dichalcogenides (2D-TMDs) hold a great potential to platform future flexible optoelectronics. The beating hearts of these materials are their excitons known as X(A) and X(B), which arise from transitions between spin-orbit split (SOS) levels in the conduction and valence bands at the K-point. The functionality of 2D-TMD-based devices is determined by the dynamics of these excitons. One of the most consequential channels of exciton decay on the device functionality is the defect-assisted recombination (DAR). Here, we employ steady-state absorption and emission spectroscopies, and pump density-dependent femtosecond transient absorption spectroscopy to report on the effect of DAR on the lifetime of excitons in monolayers of tungsten disulfide (2D-WS(2)) and diselenide (2D-WSe(2)). These pump-probe measurements suggested that while exciton decay dynamics in both monolayers are driven by DAR, in 2D-WS(2), defect states near the X(B) exciton fill up before those near the X(A) exciton. However, in the 2D-WSe(2) monolayer, the defect states fill up similarly. Understanding the contribution of DAR on the lifetime of excitons and the partition of this decay channel between X(A) and X(B) excitons may open new horizons for the incorporation of 2D-TMD materials in future optoelectronics.