Development and Research of a Theoretical Model of the Magnetic Tunnel Junction

Spin-dependent tunneling structures are widely used in many spintronic devices and sensors. This paper describes the magnetic tunnel junction (MTJ) characteristics caused by the inhomogeneous magnetic field of ferromagnetic layers. The extremely oblate magnetic ellipsoids have been used to mimic the...

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Detalles Bibliográficos
Autores principales: Polyakov, Oleg, Amelichev, Vladimir, Zhukov, Dmitry, Vasilyev, Dmitry, Kasatkin, Sergey, Polyakov, Peter, Kostyuk, Dmitry
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8002950/
https://www.ncbi.nlm.nih.gov/pubmed/33803044
http://dx.doi.org/10.3390/s21062118
Descripción
Sumario:Spin-dependent tunneling structures are widely used in many spintronic devices and sensors. This paper describes the magnetic tunnel junction (MTJ) characteristics caused by the inhomogeneous magnetic field of ferromagnetic layers. The extremely oblate magnetic ellipsoids have been used to mimic these layers. The strong effect of an inhomogeneous magnetic field on the magnetoresistive layers’ interaction was demonstrated. The magnetostatic coupling coefficient is also calculated.

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