Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

Controllable growth of wafer-scale in-plane nanowires (NWs) is a prerequisite for achieving addressable and scalable NW-based quantum devices. Here, by introducing molecular beam epitaxy on patterned Si structures, we demonstrate the wafer-scale epitaxial growth of site-controlled in-plane Si, SiGe,...

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Detalles Bibliográficos
Autores principales: Wang, Jian-Huan, Wang, Ting, Zhang, Jian-Jun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8003543/
https://www.ncbi.nlm.nih.gov/pubmed/33808713
http://dx.doi.org/10.3390/nano11030788

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8003543/
https://www.ncbi.nlm.nih.gov/pubmed/33808713
http://dx.doi.org/10.3390/nano11030788

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