Mid-wavelength infrared avalanche photodetector with AlAsSb/GaSb superlattice

In this work, a mid-wavelength infrared separate absorption and multiplication avalanche photodiode (SAM-APD) with 100% cut-off wavelength of ~ 5.0 µm at 200 K grown by molecular beam epitaxy was demonstrated. The InAsSb-based SAM-APD device was designed to have electron dominated avalanche mechanis...

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Detalles Bibliográficos
Autores principales: Li, Jiakai, Dehzangi, Arash, Brown, Gail, Razeghi, Manijeh
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8007830/
https://www.ncbi.nlm.nih.gov/pubmed/33782500
http://dx.doi.org/10.1038/s41598-021-86566-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8007830/
https://www.ncbi.nlm.nih.gov/pubmed/33782500
http://dx.doi.org/10.1038/s41598-021-86566-8

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