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Electronic Properties and Carrier Trapping in Bi and Mn Co-doped CsPbCl(3) Perovskite

[Image: see text] Metal halide perovskites exhibit impressive optoelectronic properties with applications in solar cells and light-emitting diodes. Co-doping the high-band gap CsPbCl(3) perovskite with Bi and Mn enhances both material stability and luminescence, providing emission on a wide spectral...

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Detalles Bibliográficos
Autores principales: Ricciarelli, Damiano, Mosconi, Edoardo, Merabet, Boualem, Bizzarri, Olivia, De Angelis, Filippo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2020
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8008448/
https://www.ncbi.nlm.nih.gov/pubmed/32551644
http://dx.doi.org/10.1021/acs.jpclett.0c01567
Descripción
Sumario:[Image: see text] Metal halide perovskites exhibit impressive optoelectronic properties with applications in solar cells and light-emitting diodes. Co-doping the high-band gap CsPbCl(3) perovskite with Bi and Mn enhances both material stability and luminescence, providing emission on a wide spectral range. To discuss the role of Bi(3+) and Mn(2+) dopants in tuning the CsPbCl(3) perovskite energy levels and their involvement in carrier trapping, we report state-of-the-art hybrid density functional theory calculations, including spin–orbit coupling. We show that co-doping the perovskite with Bi and Mn delivers essentially the sum of the electronic properties of the single dopants, with no significant interaction or the preferential mutual location of them. Furthermore, we identify the structural features and energetics of transitions of electrons trapped at Bi and holes trapped at Mn dopant ions, respectively, and discuss their possible role in determining the optical properties of the co-doped perovskite.