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Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor
Gate-controlled amplifiable ultraviolet phototransistors have been demonstrated using AlGaN/GaN high-electron-mobility transistors (HEMTs) with very thin AlGaN barriers. In the AlGaN/GaN HEMTs, the dark current between the source and drain increases with increasing thickness of the AlGaN barrier fro...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8010104/ https://www.ncbi.nlm.nih.gov/pubmed/33785795 http://dx.doi.org/10.1038/s41598-021-86575-7 |