Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides

Ultra-wide band-gap nitrides have huge potential in micro- and optoelectronics due to their tunable wide band-gap, high breakdown field and energy density, excellent chemical and thermal stability. However, their application has been severely hindered by the low p-doping efficiency, which is ascribe...

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Detalles Bibliográficos
Autores principales: Jiang, Ke, Sun, Xiaojuan, Shi, Zhiming, Zang, Hang, Ben, Jianwei, Deng, Hui-Xiong, Li, Dabing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8012702/
https://www.ncbi.nlm.nih.gov/pubmed/33790221
http://dx.doi.org/10.1038/s41377-021-00503-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8012702/
https://www.ncbi.nlm.nih.gov/pubmed/33790221
http://dx.doi.org/10.1038/s41377-021-00503-y

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