Water-Mediated Ionic Migration in Memristive Nanowires with a Tunable Resistive Switching Mechanism

[Image: see text] Memristive devices based on electrochemical resistive switching effects have been proposed as promising candidates for in-memory computing and for the realization of artificial neural networks. Despite great efforts toward understanding the nanoionic processes underlying resistive...

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Detalles Bibliográficos
Autores principales: Milano, Gianluca, Raffone, Federico, Luebben, Michael, Boarino, Luca, Cicero, Giancarlo, Valov, Ilia, Ricciardi, Carlo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2020
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8014891/
https://www.ncbi.nlm.nih.gov/pubmed/33052645
http://dx.doi.org/10.1021/acsami.0c13020

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8014891/
https://www.ncbi.nlm.nih.gov/pubmed/33052645
http://dx.doi.org/10.1021/acsami.0c13020

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