Electric-Field-Effect Spin Switching with an Enhanced Number of Highly Polarized Electron and Photon Spins Using p-Doped Semiconductor Quantum Dots

[Image: see text] Electric-field-effect spin switching with an enhanced number of highly polarized electron and photon spins has been demonstrated using p-doped semiconductor quantum dots (QDs). Remote p-doping in InGaAs QDs tunnel-coupled with an InGaAs quantum well (QW) significantly increased the...

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Detalles Bibliográficos
Autores principales: Park, Soyoung, Chen, Hang, Hiura, Satoshi, Takayama, Junichi, Sueoka, Kazuhisa, Murayama, Akihiro
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2021
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8015086/
https://www.ncbi.nlm.nih.gov/pubmed/33817516
http://dx.doi.org/10.1021/acsomega.1c00377

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8015086/
https://www.ncbi.nlm.nih.gov/pubmed/33817516
http://dx.doi.org/10.1021/acsomega.1c00377

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