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Electric-Field-Effect Spin Switching with an Enhanced Number of Highly Polarized Electron and Photon Spins Using p-Doped Semiconductor Quantum Dots
[Image: see text] Electric-field-effect spin switching with an enhanced number of highly polarized electron and photon spins has been demonstrated using p-doped semiconductor quantum dots (QDs). Remote p-doping in InGaAs QDs tunnel-coupled with an InGaAs quantum well (QW) significantly increased the...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2021
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8015086/ https://www.ncbi.nlm.nih.gov/pubmed/33817516 http://dx.doi.org/10.1021/acsomega.1c00377 |