Cargando…

Synthesis of Large-Scale Monolayer 1T′-MoTe(2) and Its Stabilization via Scalable hBN Encapsulation

[Image: see text] Out of the different structural phases of molybdenum ditelluride (MoTe(2)), the distorted octahedral 1T′ possesses great interest for fundamental physics and is a promising candidate for the implementation of innovative devices such as topological transistors. Indeed, 1T′-MoTe(2) i...

Descripción completa

Detalles Bibliográficos
Autores principales:	Pace, Simona, Martini, Leonardo, Convertino, Domenica, Keum, Dong Hoon, Forti, Stiven, Pezzini, Sergio, Fabbri, Filippo, Mišeikis, Vaidotas, Coletti, Camilla
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	American Chemical Society 2021
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8023802/ https://www.ncbi.nlm.nih.gov/pubmed/33605730 http://dx.doi.org/10.1021/acsnano.0c05936

Ejemplares similares

Scalable High-Mobility Graphene/hBN Heterostructures
por: Martini, Leonardo, et al.
Publicado: (2023)

Effective Photoluminescence Imaging of Bubbles in hBN-Encapsulated WSe(2) Monolayer
por: Lee, Seong-Yeon, et al.
Publicado: (2020)

Correlated states in doubly-aligned hBN/graphene/hBN heterostructures
por: Sun, Xingdan, et al.
Publicado: (2021)

Upconversion of Light into Bright Intravalley Excitons via Dark Intervalley Excitons in hBN-Encapsulated WSe(2) Monolayers
por: Jadczak, Joanna, et al.
Publicado: (2021)

New Generation of Moiré Superlattices in Doubly Aligned hBN/Graphene/hBN Heterostructures
por: Wang, Lujun, et al.
Publicado: (2019)

Localization to delocalization probed by magnetotransport of hBN/graphene/hBN stacks in the ultra-clean regime
por: Iwasaki, Takuya, et al.
Publicado: (2021)

Interface Engineering Modulated Valley Polarization in MoS(2)/hBN Heterostructure
por: Li, Fang, et al.
Publicado: (2023)

Strong Coupling of Coherent Phonons to Excitons in Semiconducting Monolayer MoTe(2)
por: Sayers, Charles J., et al.
Publicado: (2023)

Influence of the hBN Dielectric Layers on the Quantum Transport Properties of MoS(2) Transistors
por: Fiore, Sara, et al.
Publicado: (2022)

Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures
por: Gurram, M., et al.
Publicado: (2017)

Thermal Conductivity of Graphene-hBN Superlattice Ribbons
por: Felix, Isaac M., et al.
Publicado: (2018)

Interface effects in hybrid hBN-graphene nanoribbons
por: Leon, Carlos, et al.
Publicado: (2019)

Bandgap renormalization and work function tuning in MoSe(2)/hBN/Ru(0001) heterostructures
por: Zhang, Qiang, et al.
Publicado: (2016)

Microscopic Mechanism of Van der Waals Heteroepitaxy in the Formation of MoS(2)/hBN Vertical Heterostructures
por: Okada, Mitsuhiro, et al.
Publicado: (2020)

Enhanced Field-Effect Control of Single-Layer WS(2) Optical Features by hBN Full Encapsulation
por: Di Renzo, Anna, et al.
Publicado: (2022)

The influence of an interfacial hBN layer on the fluorescence of an organic molecule
por: Brülke, Christine, et al.
Publicado: (2020)

Room-temperature ferroelectricity in MoTe(2) down to the atomic monolayer limit
por: Yuan, Shuoguo, et al.
Publicado: (2019)

Ambipolar Superconductivity with Strong Pairing Interaction in Monolayer 1T′-MoTe(2)
por: Tang, Fangdong, et al.
Publicado: (2023)

Strained Monolayer MoTe(2) as a Photon Absorber in the Telecom Range
por: Ramzan, Muhammad Sufyan, et al.
Publicado: (2023)

Investigations of Electron-Electron and Interlayer Electron-Phonon Coupling in van der Waals hBN/WSe(2)/hBN Heterostructures by Photoluminescence Excitation Experiments
por: Jadczak, Joanna, et al.
Publicado: (2021)

Upconversion photoluminescence excitation reveals exciton–trion and exciton–biexciton coupling in hBN/WS[Formula: see text] /hBN van der Waals heterostructures
por: Żuberek, Ewa, et al.
Publicado: (2022)

Synthesis of cBN-hBN-SiC(w) Nanocomposite with Superior Hardness, Strength, and Toughness
por: Sun, Lei, et al.
Publicado: (2022)

Selective Detection of Carbon Monoxide on P-Block Doped Monolayers of MoTe(2)
por: Szary, Maciej J., et al.
Publicado: (2022)

Atomically precise semiconductor—graphene and hBN interfaces by Ge intercalation
por: Verbitskiy, N. I., et al.
Publicado: (2015)

hBN Nanoparticle-Assisted Rapid Thermal Cycling for the Detection of Acanthamoeba
por: Rasheed, Abdul Khaliq, et al.
Publicado: (2020)

Synergistic performance evaluation of MoS(2)–hBN hybrid nanoparticles as a tribological additive in diesel-based engine oil
por: Nagarajan, Thachnatharen, et al.
Publicado: (2023)

Electronic Janus lattice and kagome-like bands in coloring-triangular MoTe(2) monolayers
por: Lei, Le, et al.
Publicado: (2023)

Design of Heat-Conductive hBN–PMMA Composites by Electrostatic Nano-Assembly
por: Yokoi, Atsushi, et al.
Publicado: (2020)

Reaction Sintering of Biocompatible Al(2)O(3)–hBN Ceramics
por: Popov, Oleksii, et al.
Publicado: (2022)

Deep-ultraviolet electroluminescence and photocurrent generation in graphene/hBN/graphene heterostructures
por: Song, Su-Beom, et al.
Publicado: (2021)

Optical Signatures of Dirac Electrodynamics for hBN-Passivated Silicene on Au(111)
por: Genser, Jakob, et al.
Publicado: (2021)

Boron vacancy: a strategy to boost the oxygen reduction reaction of hexagonal boron nitride nanosheet in hBN–MoS(2) heterostructure
por: Roy, Dipayan, et al.
Publicado: (2021)

Unexpected Electron Transport Suppression in a Heterostructured Graphene–MoS(2) Multiple Field-Effect Transistor Architecture
por: Ciampalini, Gaia, et al.
Publicado: (2021)

Moiré-Induced Transport in CVD-Based Small-Angle Twisted Bilayer Graphene
por: Piccinini, Giulia, et al.
Publicado: (2022)

Self-assembly and spectroscopic fingerprints of photoactive pyrenyl tectons on hBN/Cu(111)
por: Zimmermann, Domenik M, et al.
Publicado: (2020)

Spin defects in hBN as promising temperature, pressure and magnetic field quantum sensors
por: Gottscholl, Andreas, et al.
Publicado: (2021)

Strong and Localized Luminescence from Interface Bubbles Between Stacked hBN Multilayers
por: Lee, Hae Yeon, et al.
Publicado: (2022)

Preparation and Research of Monolayer WS(2) FETs Encapsulated by h-BN Material
por: Han, Tao, et al.
Publicado: (2021)

Hexagonal MoTe(2) with Amorphous BN Passivation Layer for Improved Oxidation Resistance and Endurance of 2D Field Effect Transistors
por: Sirota, Benjamin, et al.
Publicado: (2018)

Formation of Highly Conductive Interfaces in Crystalline Ionic Liquid-Gated Unipolar MoTe(2)/h-BN Field-Effect Transistor
por: Saidov, Kamoladdin, et al.
Publicado: (2023)

Cannot write session to /tmp/vufind_sessions/sess_22j0kr3g3fps6bf3lk2cnsi7as