Gamma Radiation-Induced Oxidation, Doping, and Etching of Two-Dimensional MoS(2) Crystals

[Image: see text] Two-dimensional (2D) MoS(2) is a promising material for future electronic and optoelectronic applications. 2D MoS(2) devices have been shown to perform reliably under irradiation conditions relevant for a low Earth orbit. However, a systematic investigation of the stability of 2D M...

Descripción completa

Detalles Bibliográficos
Autores principales: Isherwood, Liam H., Athwal, Gursharanpreet, Spencer, Ben F., Casiraghi, Cinzia, Baidak, Aliaksandr
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2021
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8025684/
https://www.ncbi.nlm.nih.gov/pubmed/33841606
http://dx.doi.org/10.1021/acs.jpcc.0c10095

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8025684/
https://www.ncbi.nlm.nih.gov/pubmed/33841606
http://dx.doi.org/10.1021/acs.jpcc.0c10095

Ejemplares similares