Drastic improvement of Curie temperature by chemical pressure in N-type diluted magnetic semiconductor Ba(Zn,Co)[Formula: see text] As[Formula: see text]

We report the effect of chemical pressure on the ferromagnetic ordering of the recently reported n-type diluted magnetic semiconductor Ba(Zn[Formula: see text] Co[Formula: see text] )[Formula: see text] As[Formula: see text] which has a maximum [Formula: see text] [Formula: see text] 45 K. Doping Sb...

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Detalles Bibliográficos
Autores principales: Fu, Licheng, Gu, Yilun, Zhi, Guoxiang, Zhang, Haojie, Zhang, Rufei, Dong, Jinou, Zhao, Xueqin, Xie, Lingfeng, Ning, Fanlong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8027016/
https://www.ncbi.nlm.nih.gov/pubmed/33828123
http://dx.doi.org/10.1038/s41598-021-86205-2
_version_ 1783675739765211136
author Fu, Licheng
Gu, Yilun
Zhi, Guoxiang
Zhang, Haojie
Zhang, Rufei
Dong, Jinou
Zhao, Xueqin
Xie, Lingfeng
Ning, Fanlong
author_facet Fu, Licheng
Gu, Yilun
Zhi, Guoxiang
Zhang, Haojie
Zhang, Rufei
Dong, Jinou
Zhao, Xueqin
Xie, Lingfeng
Ning, Fanlong
author_sort Fu, Licheng
collection PubMed
description We report the effect of chemical pressure on the ferromagnetic ordering of the recently reported n-type diluted magnetic semiconductor Ba(Zn[Formula: see text] Co[Formula: see text] )[Formula: see text] As[Formula: see text] which has a maximum [Formula: see text] [Formula: see text] 45 K. Doping Sb into As-site and Sr into Ba-site induces negative and positive chemical pressure, respectively. While conserving the tetragonal crystal structure and n-type carriers, the unit cell volume shrink by [Formula: see text] 0.3[Formula: see text] with 15[Formula: see text] Sr doping, but drastically increase the ferromagnetic transition temperature by 18[Formula: see text] to 53 K. Our experiment unequivocally demonstrate that the parameters of Zn(Co)As[Formula: see text] tetrahedra play a vital role in the formation of ferromagnetic ordering in the Ba(Zn,Co)[Formula: see text] As[Formula: see text] DMS.
format Online
Article
Text
id pubmed-8027016
institution National Center for Biotechnology Information
language English
publishDate 2021
publisher Nature Publishing Group UK
record_format MEDLINE/PubMed
spelling pubmed-80270162021-04-08 Drastic improvement of Curie temperature by chemical pressure in N-type diluted magnetic semiconductor Ba(Zn,Co)[Formula: see text] As[Formula: see text] Fu, Licheng Gu, Yilun Zhi, Guoxiang Zhang, Haojie Zhang, Rufei Dong, Jinou Zhao, Xueqin Xie, Lingfeng Ning, Fanlong Sci Rep Article We report the effect of chemical pressure on the ferromagnetic ordering of the recently reported n-type diluted magnetic semiconductor Ba(Zn[Formula: see text] Co[Formula: see text] )[Formula: see text] As[Formula: see text] which has a maximum [Formula: see text] [Formula: see text] 45 K. Doping Sb into As-site and Sr into Ba-site induces negative and positive chemical pressure, respectively. While conserving the tetragonal crystal structure and n-type carriers, the unit cell volume shrink by [Formula: see text] 0.3[Formula: see text] with 15[Formula: see text] Sr doping, but drastically increase the ferromagnetic transition temperature by 18[Formula: see text] to 53 K. Our experiment unequivocally demonstrate that the parameters of Zn(Co)As[Formula: see text] tetrahedra play a vital role in the formation of ferromagnetic ordering in the Ba(Zn,Co)[Formula: see text] As[Formula: see text] DMS. Nature Publishing Group UK 2021-04-07 /pmc/articles/PMC8027016/ /pubmed/33828123 http://dx.doi.org/10.1038/s41598-021-86205-2 Text en © The Author(s) 2021 Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Fu, Licheng
Gu, Yilun
Zhi, Guoxiang
Zhang, Haojie
Zhang, Rufei
Dong, Jinou
Zhao, Xueqin
Xie, Lingfeng
Ning, Fanlong
Drastic improvement of Curie temperature by chemical pressure in N-type diluted magnetic semiconductor Ba(Zn,Co)[Formula: see text] As[Formula: see text]
title Drastic improvement of Curie temperature by chemical pressure in N-type diluted magnetic semiconductor Ba(Zn,Co)[Formula: see text] As[Formula: see text]
title_full Drastic improvement of Curie temperature by chemical pressure in N-type diluted magnetic semiconductor Ba(Zn,Co)[Formula: see text] As[Formula: see text]
title_fullStr Drastic improvement of Curie temperature by chemical pressure in N-type diluted magnetic semiconductor Ba(Zn,Co)[Formula: see text] As[Formula: see text]
title_full_unstemmed Drastic improvement of Curie temperature by chemical pressure in N-type diluted magnetic semiconductor Ba(Zn,Co)[Formula: see text] As[Formula: see text]
title_short Drastic improvement of Curie temperature by chemical pressure in N-type diluted magnetic semiconductor Ba(Zn,Co)[Formula: see text] As[Formula: see text]
title_sort drastic improvement of curie temperature by chemical pressure in n-type diluted magnetic semiconductor ba(zn,co)[formula: see text] as[formula: see text]
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8027016/
https://www.ncbi.nlm.nih.gov/pubmed/33828123
http://dx.doi.org/10.1038/s41598-021-86205-2
work_keys_str_mv AT fulicheng drasticimprovementofcurietemperaturebychemicalpressureinntypedilutedmagneticsemiconductorbazncoformulaseetextasformulaseetext
AT guyilun drasticimprovementofcurietemperaturebychemicalpressureinntypedilutedmagneticsemiconductorbazncoformulaseetextasformulaseetext
AT zhiguoxiang drasticimprovementofcurietemperaturebychemicalpressureinntypedilutedmagneticsemiconductorbazncoformulaseetextasformulaseetext
AT zhanghaojie drasticimprovementofcurietemperaturebychemicalpressureinntypedilutedmagneticsemiconductorbazncoformulaseetextasformulaseetext
AT zhangrufei drasticimprovementofcurietemperaturebychemicalpressureinntypedilutedmagneticsemiconductorbazncoformulaseetextasformulaseetext
AT dongjinou drasticimprovementofcurietemperaturebychemicalpressureinntypedilutedmagneticsemiconductorbazncoformulaseetextasformulaseetext
AT zhaoxueqin drasticimprovementofcurietemperaturebychemicalpressureinntypedilutedmagneticsemiconductorbazncoformulaseetextasformulaseetext
AT xielingfeng drasticimprovementofcurietemperaturebychemicalpressureinntypedilutedmagneticsemiconductorbazncoformulaseetextasformulaseetext
AT ningfanlong drasticimprovementofcurietemperaturebychemicalpressureinntypedilutedmagneticsemiconductorbazncoformulaseetextasformulaseetext

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