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Threshold voltage instability and polyimide charging effects of LTPS TFTs for flexible displays

In this paper, we investigate the V(th) shift of p-type LTPS TFTs fabricated on a polyimide (PI) and glass substrate considering charging phenomena. The V(th) of the LTPS TFTs with a PI substrate positively shift after a bias temperature stress test. However, the V(th) with a glass substrate rarely...

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Autores principales: Kim, Hyojung, Park, Jongwoo, Khim, Taeyoung, Bak, Sora, Song, Jangkun, Choi, Byoungdeog
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8052436/
https://www.ncbi.nlm.nih.gov/pubmed/33863982
http://dx.doi.org/10.1038/s41598-021-87950-0
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author Kim, Hyojung
Park, Jongwoo
Khim, Taeyoung
Bak, Sora
Song, Jangkun
Choi, Byoungdeog
author_facet Kim, Hyojung
Park, Jongwoo
Khim, Taeyoung
Bak, Sora
Song, Jangkun
Choi, Byoungdeog
author_sort Kim, Hyojung
collection PubMed
description In this paper, we investigate the V(th) shift of p-type LTPS TFTs fabricated on a polyimide (PI) and glass substrate considering charging phenomena. The V(th) of the LTPS TFTs with a PI substrate positively shift after a bias temperature stress test. However, the V(th) with a glass substrate rarely changed even with increasing stress. Such a positive V(th) shift results from the negative charging of fluorine stemmed from the PI under the gate bias. In fact, the C–V characterization on the metal–insulator-metal capacitor reveals that charging at the SiO(2)/PI interface depends on the applied gate bias and the PI material, which agrees well with the TCAD simulation and SIMS analyses. As a result, the charging at the SiO(2)/PI interface contributes to the V(th) shift of the LTPS TFTs leading to image sticking.
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spelling pubmed-80524362021-04-22 Threshold voltage instability and polyimide charging effects of LTPS TFTs for flexible displays Kim, Hyojung Park, Jongwoo Khim, Taeyoung Bak, Sora Song, Jangkun Choi, Byoungdeog Sci Rep Article In this paper, we investigate the V(th) shift of p-type LTPS TFTs fabricated on a polyimide (PI) and glass substrate considering charging phenomena. The V(th) of the LTPS TFTs with a PI substrate positively shift after a bias temperature stress test. However, the V(th) with a glass substrate rarely changed even with increasing stress. Such a positive V(th) shift results from the negative charging of fluorine stemmed from the PI under the gate bias. In fact, the C–V characterization on the metal–insulator-metal capacitor reveals that charging at the SiO(2)/PI interface depends on the applied gate bias and the PI material, which agrees well with the TCAD simulation and SIMS analyses. As a result, the charging at the SiO(2)/PI interface contributes to the V(th) shift of the LTPS TFTs leading to image sticking. Nature Publishing Group UK 2021-04-16 /pmc/articles/PMC8052436/ /pubmed/33863982 http://dx.doi.org/10.1038/s41598-021-87950-0 Text en © The Author(s) 2021 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Kim, Hyojung
Park, Jongwoo
Khim, Taeyoung
Bak, Sora
Song, Jangkun
Choi, Byoungdeog
Threshold voltage instability and polyimide charging effects of LTPS TFTs for flexible displays
title Threshold voltage instability and polyimide charging effects of LTPS TFTs for flexible displays
title_full Threshold voltage instability and polyimide charging effects of LTPS TFTs for flexible displays
title_fullStr Threshold voltage instability and polyimide charging effects of LTPS TFTs for flexible displays
title_full_unstemmed Threshold voltage instability and polyimide charging effects of LTPS TFTs for flexible displays
title_short Threshold voltage instability and polyimide charging effects of LTPS TFTs for flexible displays
title_sort threshold voltage instability and polyimide charging effects of ltps tfts for flexible displays
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8052436/
https://www.ncbi.nlm.nih.gov/pubmed/33863982
http://dx.doi.org/10.1038/s41598-021-87950-0
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