Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs

This paper focuses on the understanding of the Random Telegraph Signal (RTS) in Single-Photon Avalanche Diodes (SPAD). We studied the RTS of two different SPAD layouts, designed and implemented in a 150-nm CMOS process, after proton irradiation. The two structures are characterized by different junc...

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Autores principales: Capua, F. Di, Campajola, M., Fiore, D., Gasparini, L., Sarnelli, E., Aloisio, A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8060403/
https://www.ncbi.nlm.nih.gov/pubmed/33883584
http://dx.doi.org/10.1038/s41598-021-87962-w
_version_ 1783681354608672768
author Capua, F. Di
Campajola, M.
Fiore, D.
Gasparini, L.
Sarnelli, E.
Aloisio, A.
author_facet Capua, F. Di
Campajola, M.
Fiore, D.
Gasparini, L.
Sarnelli, E.
Aloisio, A.
author_sort Capua, F. Di
collection PubMed
description This paper focuses on the understanding of the Random Telegraph Signal (RTS) in Single-Photon Avalanche Diodes (SPAD). We studied the RTS of two different SPAD layouts, designed and implemented in a 150-nm CMOS process, after proton irradiation. The two structures are characterized by different junction types: the first structure is constituted by a P+/Nwell junction, while the second is formed by a Pwell/Niso junction. RTS occurrence has been measured in about one thousand SPAD pixels and the differences addressed in two layouts are motivated and discussed. Hypotheses on the RTS origin are drawn by analyzing the RTS time constants and the RTS occurrence evolution as a function of the annealing temperature.
format Online
Article
Text
id pubmed-8060403
institution National Center for Biotechnology Information
language English
publishDate 2021
publisher Nature Publishing Group UK
record_format MEDLINE/PubMed
spelling pubmed-80604032021-04-23 Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs Capua, F. Di Campajola, M. Fiore, D. Gasparini, L. Sarnelli, E. Aloisio, A. Sci Rep Article This paper focuses on the understanding of the Random Telegraph Signal (RTS) in Single-Photon Avalanche Diodes (SPAD). We studied the RTS of two different SPAD layouts, designed and implemented in a 150-nm CMOS process, after proton irradiation. The two structures are characterized by different junction types: the first structure is constituted by a P+/Nwell junction, while the second is formed by a Pwell/Niso junction. RTS occurrence has been measured in about one thousand SPAD pixels and the differences addressed in two layouts are motivated and discussed. Hypotheses on the RTS origin are drawn by analyzing the RTS time constants and the RTS occurrence evolution as a function of the annealing temperature. Nature Publishing Group UK 2021-04-21 /pmc/articles/PMC8060403/ /pubmed/33883584 http://dx.doi.org/10.1038/s41598-021-87962-w Text en © The Author(s) 2021 https://creativecommons.org/licenses/by/4.0/Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Capua, F. Di
Campajola, M.
Fiore, D.
Gasparini, L.
Sarnelli, E.
Aloisio, A.
Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs
title Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs
title_full Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs
title_fullStr Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs
title_full_unstemmed Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs
title_short Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs
title_sort investigation of random telegraph signal in two junction layouts of proton irradiated cmos spads
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8060403/
https://www.ncbi.nlm.nih.gov/pubmed/33883584
http://dx.doi.org/10.1038/s41598-021-87962-w
work_keys_str_mv AT capuafdi investigationofrandomtelegraphsignalintwojunctionlayoutsofprotonirradiatedcmosspads
AT campajolam investigationofrandomtelegraphsignalintwojunctionlayoutsofprotonirradiatedcmosspads
AT fiored investigationofrandomtelegraphsignalintwojunctionlayoutsofprotonirradiatedcmosspads
AT gasparinil investigationofrandomtelegraphsignalintwojunctionlayoutsofprotonirradiatedcmosspads
AT sarnellie investigationofrandomtelegraphsignalintwojunctionlayoutsofprotonirradiatedcmosspads
AT aloisioa investigationofrandomtelegraphsignalintwojunctionlayoutsofprotonirradiatedcmosspads

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