Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs

This paper focuses on the understanding of the Random Telegraph Signal (RTS) in Single-Photon Avalanche Diodes (SPAD). We studied the RTS of two different SPAD layouts, designed and implemented in a 150-nm CMOS process, after proton irradiation. The two structures are characterized by different junc...

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Detalles Bibliográficos
Autores principales: Capua, F. Di, Campajola, M., Fiore, D., Gasparini, L., Sarnelli, E., Aloisio, A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8060403/
https://www.ncbi.nlm.nih.gov/pubmed/33883584
http://dx.doi.org/10.1038/s41598-021-87962-w

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