Wafer-Scale Epitaxial Low Density InAs/GaAs Quantum Dot for Single Photon Emitter in Three-Inch Substrate

In this work, we successfully achieved wafer-scale low density InAs/GaAs quantum dots (QDs) for single photon emitter on three-inch wafer by precisely controlling the growth parameters. The highly uniform InAs/GaAs QDs show low density of [Formula: see text] within the radius of 2 cm. When embedding...

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Detalles Bibliográficos
Autores principales: Huang, Xiaoying, Su, Rongbin, Yang, Jiawei, Rao, Mujie, Liu, Jin, Yu, Ying, Yu, Siyuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8067461/
https://www.ncbi.nlm.nih.gov/pubmed/33917459
http://dx.doi.org/10.3390/nano11040930
Descripción
Sumario:In this work, we successfully achieved wafer-scale low density InAs/GaAs quantum dots (QDs) for single photon emitter on three-inch wafer by precisely controlling the growth parameters. The highly uniform InAs/GaAs QDs show low density of [Formula: see text] within the radius of 2 cm. When embedding into a circular Bragg grating cavity on highly efficient broadband reflector (CBR-HBR), the single QDs show excellent optoelectronic properties with the linewidth of [Formula: see text] , the second-order correlation factor [Formula: see text] , and an exciton life time of 323 ps under two-photon resonant excitation.

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