Wafer-Scale Epitaxial Low Density InAs/GaAs Quantum Dot for Single Photon Emitter in Three-Inch Substrate

In this work, we successfully achieved wafer-scale low density InAs/GaAs quantum dots (QDs) for single photon emitter on three-inch wafer by precisely controlling the growth parameters. The highly uniform InAs/GaAs QDs show low density of [Formula: see text] within the radius of 2 cm. When embedding...

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Detalles Bibliográficos
Autores principales: Huang, Xiaoying, Su, Rongbin, Yang, Jiawei, Rao, Mujie, Liu, Jin, Yu, Ying, Yu, Siyuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8067461/
https://www.ncbi.nlm.nih.gov/pubmed/33917459
http://dx.doi.org/10.3390/nano11040930
_version_ 1783682808995119104
author Huang, Xiaoying
Su, Rongbin
Yang, Jiawei
Rao, Mujie
Liu, Jin
Yu, Ying
Yu, Siyuan
author_facet Huang, Xiaoying
Su, Rongbin
Yang, Jiawei
Rao, Mujie
Liu, Jin
Yu, Ying
Yu, Siyuan
author_sort Huang, Xiaoying
collection PubMed
description In this work, we successfully achieved wafer-scale low density InAs/GaAs quantum dots (QDs) for single photon emitter on three-inch wafer by precisely controlling the growth parameters. The highly uniform InAs/GaAs QDs show low density of [Formula: see text] within the radius of 2 cm. When embedding into a circular Bragg grating cavity on highly efficient broadband reflector (CBR-HBR), the single QDs show excellent optoelectronic properties with the linewidth of [Formula: see text] , the second-order correlation factor [Formula: see text] , and an exciton life time of 323 ps under two-photon resonant excitation.
format Online
Article
Text
id pubmed-8067461
institution National Center for Biotechnology Information
language English
publishDate 2021
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-80674612021-04-25 Wafer-Scale Epitaxial Low Density InAs/GaAs Quantum Dot for Single Photon Emitter in Three-Inch Substrate Huang, Xiaoying Su, Rongbin Yang, Jiawei Rao, Mujie Liu, Jin Yu, Ying Yu, Siyuan Nanomaterials (Basel) Article In this work, we successfully achieved wafer-scale low density InAs/GaAs quantum dots (QDs) for single photon emitter on three-inch wafer by precisely controlling the growth parameters. The highly uniform InAs/GaAs QDs show low density of [Formula: see text] within the radius of 2 cm. When embedding into a circular Bragg grating cavity on highly efficient broadband reflector (CBR-HBR), the single QDs show excellent optoelectronic properties with the linewidth of [Formula: see text] , the second-order correlation factor [Formula: see text] , and an exciton life time of 323 ps under two-photon resonant excitation. MDPI 2021-04-06 /pmc/articles/PMC8067461/ /pubmed/33917459 http://dx.doi.org/10.3390/nano11040930 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Huang, Xiaoying
Su, Rongbin
Yang, Jiawei
Rao, Mujie
Liu, Jin
Yu, Ying
Yu, Siyuan
Wafer-Scale Epitaxial Low Density InAs/GaAs Quantum Dot for Single Photon Emitter in Three-Inch Substrate
title Wafer-Scale Epitaxial Low Density InAs/GaAs Quantum Dot for Single Photon Emitter in Three-Inch Substrate
title_full Wafer-Scale Epitaxial Low Density InAs/GaAs Quantum Dot for Single Photon Emitter in Three-Inch Substrate
title_fullStr Wafer-Scale Epitaxial Low Density InAs/GaAs Quantum Dot for Single Photon Emitter in Three-Inch Substrate
title_full_unstemmed Wafer-Scale Epitaxial Low Density InAs/GaAs Quantum Dot for Single Photon Emitter in Three-Inch Substrate
title_short Wafer-Scale Epitaxial Low Density InAs/GaAs Quantum Dot for Single Photon Emitter in Three-Inch Substrate
title_sort wafer-scale epitaxial low density inas/gaas quantum dot for single photon emitter in three-inch substrate
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8067461/
https://www.ncbi.nlm.nih.gov/pubmed/33917459
http://dx.doi.org/10.3390/nano11040930
work_keys_str_mv AT huangxiaoying waferscaleepitaxiallowdensityinasgaasquantumdotforsinglephotonemitterinthreeinchsubstrate
AT surongbin waferscaleepitaxiallowdensityinasgaasquantumdotforsinglephotonemitterinthreeinchsubstrate
AT yangjiawei waferscaleepitaxiallowdensityinasgaasquantumdotforsinglephotonemitterinthreeinchsubstrate
AT raomujie waferscaleepitaxiallowdensityinasgaasquantumdotforsinglephotonemitterinthreeinchsubstrate
AT liujin waferscaleepitaxiallowdensityinasgaasquantumdotforsinglephotonemitterinthreeinchsubstrate
AT yuying waferscaleepitaxiallowdensityinasgaasquantumdotforsinglephotonemitterinthreeinchsubstrate
AT yusiyuan waferscaleepitaxiallowdensityinasgaasquantumdotforsinglephotonemitterinthreeinchsubstrate

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