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XRD Evaluation of Wurtzite Phase in MBE Grown Self-Catalyzed GaP Nanowires

Control and analysis of the crystal phase in semiconductor nanowires are of high importance due to the new possibilities for strain and band gap engineering for advanced nanoelectronic and nanophotonic devices. In this letter, we report the growth of the self-catalyzed GaP nanowires with a high conc...

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Autores principales: Koval, Olga Yu., Fedorov, Vladimir V., Bolshakov, Alexey D., Eliseev, Igor E., Fedina, Sergey V., Sapunov, Georgiy A., Udovenko, Stanislav A., Dvoretckaia, Liliia N., Kirilenko, Demid A., Burkovsky, Roman G., Mukhin, Ivan S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8070561/
https://www.ncbi.nlm.nih.gov/pubmed/33918690
http://dx.doi.org/10.3390/nano11040960
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author Koval, Olga Yu.
Fedorov, Vladimir V.
Bolshakov, Alexey D.
Eliseev, Igor E.
Fedina, Sergey V.
Sapunov, Georgiy A.
Udovenko, Stanislav A.
Dvoretckaia, Liliia N.
Kirilenko, Demid A.
Burkovsky, Roman G.
Mukhin, Ivan S.
author_facet Koval, Olga Yu.
Fedorov, Vladimir V.
Bolshakov, Alexey D.
Eliseev, Igor E.
Fedina, Sergey V.
Sapunov, Georgiy A.
Udovenko, Stanislav A.
Dvoretckaia, Liliia N.
Kirilenko, Demid A.
Burkovsky, Roman G.
Mukhin, Ivan S.
author_sort Koval, Olga Yu.
collection PubMed
description Control and analysis of the crystal phase in semiconductor nanowires are of high importance due to the new possibilities for strain and band gap engineering for advanced nanoelectronic and nanophotonic devices. In this letter, we report the growth of the self-catalyzed GaP nanowires with a high concentration of wurtzite phase by molecular beam epitaxy on Si (111) and investigate their crystallinity. Varying the growth temperature and V/III flux ratio, we obtained wurtzite polytype segments with thicknesses in the range from several tens to 500 nm, which demonstrates the high potential of the phase bandgap engineering with highly crystalline self-catalyzed phosphide nanowires. The formation of rotational twins and wurtzite polymorph in vertical nanowires was observed through complex approach based on transmission electron microscopy, powder X-ray diffraction, and reciprocal space mapping. The phase composition, volume fraction of the crystalline phases, and wurtzite GaP lattice parameters were analyzed for the nanowires detached from the substrate. It is shown that the wurtzite phase formation occurs only in the vertically-oriented nanowires during vapor-liquid-solid growth, while the wurtzite phase is absent in GaP islands parasitically grown via the vapor-solid mechanism. The proposed approach can be used for the quantitative evaluation of the mean volume fraction of polytypic phase segments in heterostructured nanowires that are highly desirable for the optimization of growth technologies.
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spelling pubmed-80705612021-04-26 XRD Evaluation of Wurtzite Phase in MBE Grown Self-Catalyzed GaP Nanowires Koval, Olga Yu. Fedorov, Vladimir V. Bolshakov, Alexey D. Eliseev, Igor E. Fedina, Sergey V. Sapunov, Georgiy A. Udovenko, Stanislav A. Dvoretckaia, Liliia N. Kirilenko, Demid A. Burkovsky, Roman G. Mukhin, Ivan S. Nanomaterials (Basel) Article Control and analysis of the crystal phase in semiconductor nanowires are of high importance due to the new possibilities for strain and band gap engineering for advanced nanoelectronic and nanophotonic devices. In this letter, we report the growth of the self-catalyzed GaP nanowires with a high concentration of wurtzite phase by molecular beam epitaxy on Si (111) and investigate their crystallinity. Varying the growth temperature and V/III flux ratio, we obtained wurtzite polytype segments with thicknesses in the range from several tens to 500 nm, which demonstrates the high potential of the phase bandgap engineering with highly crystalline self-catalyzed phosphide nanowires. The formation of rotational twins and wurtzite polymorph in vertical nanowires was observed through complex approach based on transmission electron microscopy, powder X-ray diffraction, and reciprocal space mapping. The phase composition, volume fraction of the crystalline phases, and wurtzite GaP lattice parameters were analyzed for the nanowires detached from the substrate. It is shown that the wurtzite phase formation occurs only in the vertically-oriented nanowires during vapor-liquid-solid growth, while the wurtzite phase is absent in GaP islands parasitically grown via the vapor-solid mechanism. The proposed approach can be used for the quantitative evaluation of the mean volume fraction of polytypic phase segments in heterostructured nanowires that are highly desirable for the optimization of growth technologies. MDPI 2021-04-09 /pmc/articles/PMC8070561/ /pubmed/33918690 http://dx.doi.org/10.3390/nano11040960 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Koval, Olga Yu.
Fedorov, Vladimir V.
Bolshakov, Alexey D.
Eliseev, Igor E.
Fedina, Sergey V.
Sapunov, Georgiy A.
Udovenko, Stanislav A.
Dvoretckaia, Liliia N.
Kirilenko, Demid A.
Burkovsky, Roman G.
Mukhin, Ivan S.
XRD Evaluation of Wurtzite Phase in MBE Grown Self-Catalyzed GaP Nanowires
title XRD Evaluation of Wurtzite Phase in MBE Grown Self-Catalyzed GaP Nanowires
title_full XRD Evaluation of Wurtzite Phase in MBE Grown Self-Catalyzed GaP Nanowires
title_fullStr XRD Evaluation of Wurtzite Phase in MBE Grown Self-Catalyzed GaP Nanowires
title_full_unstemmed XRD Evaluation of Wurtzite Phase in MBE Grown Self-Catalyzed GaP Nanowires
title_short XRD Evaluation of Wurtzite Phase in MBE Grown Self-Catalyzed GaP Nanowires
title_sort xrd evaluation of wurtzite phase in mbe grown self-catalyzed gap nanowires
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8070561/
https://www.ncbi.nlm.nih.gov/pubmed/33918690
http://dx.doi.org/10.3390/nano11040960
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