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Bandwidth-control orbital-selective delocalization of 4f electrons in epitaxial Ce films
The 4f-electron delocalization plays a key role in the low-temperature properties of rare-earth metals and intermetallics, and it is normally realized by the Kondo coupling between 4f and conduction electrons. Due to the large Coulomb repulsion of 4f electrons, the bandwidth-control Mott-type deloca...
Autores principales: | , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8096960/ https://www.ncbi.nlm.nih.gov/pubmed/33947850 http://dx.doi.org/10.1038/s41467-021-22710-2 |
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author | Wu, Yi Fang, Yuan Li, Peng Xiao, Zhiguang Zheng, Hao Yuan, Huiqiu Cao, Chao Yang, Yi-feng Liu, Yang |
author_facet | Wu, Yi Fang, Yuan Li, Peng Xiao, Zhiguang Zheng, Hao Yuan, Huiqiu Cao, Chao Yang, Yi-feng Liu, Yang |
author_sort | Wu, Yi |
collection | PubMed |
description | The 4f-electron delocalization plays a key role in the low-temperature properties of rare-earth metals and intermetallics, and it is normally realized by the Kondo coupling between 4f and conduction electrons. Due to the large Coulomb repulsion of 4f electrons, the bandwidth-control Mott-type delocalization, commonly observed in d-electron systems, is difficult in 4f-electron systems and remains elusive in spectroscopic experiments. Here we demonstrate that the bandwidth-control orbital-selective delocalization of 4f electrons can be realized in epitaxial Ce films by thermal annealing, which results in a metastable surface phase with reduced layer spacing. The quasiparticle bands exhibit large dispersion with exclusive 4f character near [Formula: see text] and extend reasonably far below the Fermi energy, which can be explained from the Mott physics. The experimental quasiparticle dispersion agrees well with density-functional theory calculation and also exhibits unusual temperature dependence, which could arise from the delicate interplay between the bandwidth-control Mott physics and the coexisting Kondo hybridization. Our work opens up the opportunity to study the interaction between two well-known localization-delocalization mechanisms in correlation physics, i.e., Kondo vs Mott, which can be important for a fundamental understanding of 4f-electron systems. |
format | Online Article Text |
id | pubmed-8096960 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-80969602021-05-11 Bandwidth-control orbital-selective delocalization of 4f electrons in epitaxial Ce films Wu, Yi Fang, Yuan Li, Peng Xiao, Zhiguang Zheng, Hao Yuan, Huiqiu Cao, Chao Yang, Yi-feng Liu, Yang Nat Commun Article The 4f-electron delocalization plays a key role in the low-temperature properties of rare-earth metals and intermetallics, and it is normally realized by the Kondo coupling between 4f and conduction electrons. Due to the large Coulomb repulsion of 4f electrons, the bandwidth-control Mott-type delocalization, commonly observed in d-electron systems, is difficult in 4f-electron systems and remains elusive in spectroscopic experiments. Here we demonstrate that the bandwidth-control orbital-selective delocalization of 4f electrons can be realized in epitaxial Ce films by thermal annealing, which results in a metastable surface phase with reduced layer spacing. The quasiparticle bands exhibit large dispersion with exclusive 4f character near [Formula: see text] and extend reasonably far below the Fermi energy, which can be explained from the Mott physics. The experimental quasiparticle dispersion agrees well with density-functional theory calculation and also exhibits unusual temperature dependence, which could arise from the delicate interplay between the bandwidth-control Mott physics and the coexisting Kondo hybridization. Our work opens up the opportunity to study the interaction between two well-known localization-delocalization mechanisms in correlation physics, i.e., Kondo vs Mott, which can be important for a fundamental understanding of 4f-electron systems. Nature Publishing Group UK 2021-05-04 /pmc/articles/PMC8096960/ /pubmed/33947850 http://dx.doi.org/10.1038/s41467-021-22710-2 Text en © The Author(s) 2021 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Article Wu, Yi Fang, Yuan Li, Peng Xiao, Zhiguang Zheng, Hao Yuan, Huiqiu Cao, Chao Yang, Yi-feng Liu, Yang Bandwidth-control orbital-selective delocalization of 4f electrons in epitaxial Ce films |
title | Bandwidth-control orbital-selective delocalization of 4f electrons in epitaxial Ce films |
title_full | Bandwidth-control orbital-selective delocalization of 4f electrons in epitaxial Ce films |
title_fullStr | Bandwidth-control orbital-selective delocalization of 4f electrons in epitaxial Ce films |
title_full_unstemmed | Bandwidth-control orbital-selective delocalization of 4f electrons in epitaxial Ce films |
title_short | Bandwidth-control orbital-selective delocalization of 4f electrons in epitaxial Ce films |
title_sort | bandwidth-control orbital-selective delocalization of 4f electrons in epitaxial ce films |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8096960/ https://www.ncbi.nlm.nih.gov/pubmed/33947850 http://dx.doi.org/10.1038/s41467-021-22710-2 |
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