Bandwidth-control orbital-selective delocalization of 4f electrons in epitaxial Ce films

The 4f-electron delocalization plays a key role in the low-temperature properties of rare-earth metals and intermetallics, and it is normally realized by the Kondo coupling between 4f and conduction electrons. Due to the large Coulomb repulsion of 4f electrons, the bandwidth-control Mott-type deloca...

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Detalles Bibliográficos
Autores principales: Wu, Yi, Fang, Yuan, Li, Peng, Xiao, Zhiguang, Zheng, Hao, Yuan, Huiqiu, Cao, Chao, Yang, Yi-feng, Liu, Yang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8096960/
https://www.ncbi.nlm.nih.gov/pubmed/33947850
http://dx.doi.org/10.1038/s41467-021-22710-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8096960/
https://www.ncbi.nlm.nih.gov/pubmed/33947850
http://dx.doi.org/10.1038/s41467-021-22710-2

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