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Bandwidth-control orbital-selective delocalization of 4f electrons in epitaxial Ce films
The 4f-electron delocalization plays a key role in the low-temperature properties of rare-earth metals and intermetallics, and it is normally realized by the Kondo coupling between 4f and conduction electrons. Due to the large Coulomb repulsion of 4f electrons, the bandwidth-control Mott-type deloca...
| Autores principales: | , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8096960/ https://www.ncbi.nlm.nih.gov/pubmed/33947850 http://dx.doi.org/10.1038/s41467-021-22710-2 |