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Femtosecond Laser Fabrication of Micro and Nano-Structures on CIGS/ITO Bilayer Films for Thin-Film Solar Cells

Cu(In, Ga)Se(2) (CIGS) thin films have attracted considerable interest as potential photovoltaic solar cells. Moreover, several current studies are focusing on improving their conversion efficiency. This study proposes a method to process micro- and nanostructures onto the surface of CIGS/ITO bilaye...

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Detalles Bibliográficos
Autores principales: Yang, Huizhu, Jiang, Gedong, Wang, Wenjun, Mei, Xuesong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8124838/
https://www.ncbi.nlm.nih.gov/pubmed/34066422
http://dx.doi.org/10.3390/ma14092413
Descripción
Sumario:Cu(In, Ga)Se(2) (CIGS) thin films have attracted considerable interest as potential photovoltaic solar cells. Moreover, several current studies are focusing on improving their conversion efficiency. This study proposes a method to process micro- and nanostructures onto the surface of CIGS/ITO bilayer films to broaden the field of solar cell application. The bilayer films exhibited optical characteristics different from those of a single-film during processing. Field intensities at different layer positions of the CIGS/ITO bilayer films were analyzed, and different structures were fabricated by varying a set of parameters. Ripples were obtained using a pulse energy of 0.15 μJ and scanning speeds in the range of 0.1–1 mm/s, but after increasing speed to 3–5 mm/s, ripple structures were produced that had a large period of several microns and spatial porous nanostructures. This pattern exhibited low reflectivity. Optimal structures were obtained at a scanning speed of 3.5 mm/s a pulse energy of 0.15 μJ, and a reflectivity lower than 5%. Large areas characterized by micron-sized ripple structures and accompanied by nanoscale porous structures presented high optical performance and efficiency, which can be used to broaden the application of thin film-based solar cells.