Strain-Modulated Photoelectric Responses from a Flexible α-In(2)Se(3)/3R MoS(2) Heterojunction

Semiconducting piezoelectric α-In(2)Se(3) and 3R MoS(2) have attracted tremendous attention due to their unique electronic properties. Artificial van der Waals (vdWs) heterostructures constructed with α-In(2)Se(3) and 3R MoS(2) flakes have shown promising applications in optoelectronics and photocatalysis. Here, we present the first flexible α-In(2)Se(3)/3R MoS(2) vdWs p-n heterojunction devices for photodetection from the visible to near infrared region. These heterojunction devices exhibit an ultrahigh photoresponsivity of 2.9 × 10(3) A W(−1) and a substantial specific detectivity of 6.2 × 10(10) Jones under a compressive strain of − 0.26%. The photocurrent can be increased by 64% under a tensile strain of + 0.35%, due to the heterojunction energy band modulation by piezoelectric polarization charges at the heterojunction interface. This work demonstrates a feasible approach to enhancement of α-In(2)Se(3)/3R MoS(2) photoelectric response through an appropriate mechanical stimulus. [Image: see text] SUPPLEMENTARY MATERIAL: The online version contains supplementary material available at (10.1007/s40820-020-00584-1) contains supplementary material, which is available to authorized users.