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Self-clocking fast and variation tolerant true random number generator based on a stochastic mott memristor

The intrinsic stochasticity of the memristor can be used to generate true random numbers, essential for non-decryptable hardware-based security devices. Here, we propose a novel and advanced method to generate true random numbers utilizing the stochastic oscillation behavior of a NbO(x) mott memrist...

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Autores principales: Kim, Gwangmin, In, Jae Hyun, Kim, Young Seok, Rhee, Hakseung, Park, Woojoon, Song, Hanchan, Park, Juseong, Kim, Kyung Min
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8131590/
https://www.ncbi.nlm.nih.gov/pubmed/34006879
http://dx.doi.org/10.1038/s41467-021-23184-y
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author Kim, Gwangmin
In, Jae Hyun
Kim, Young Seok
Rhee, Hakseung
Park, Woojoon
Song, Hanchan
Park, Juseong
Kim, Kyung Min
author_facet Kim, Gwangmin
In, Jae Hyun
Kim, Young Seok
Rhee, Hakseung
Park, Woojoon
Song, Hanchan
Park, Juseong
Kim, Kyung Min
author_sort Kim, Gwangmin
collection PubMed
description The intrinsic stochasticity of the memristor can be used to generate true random numbers, essential for non-decryptable hardware-based security devices. Here, we propose a novel and advanced method to generate true random numbers utilizing the stochastic oscillation behavior of a NbO(x) mott memristor, exhibiting self-clocking, fast and variation tolerant characteristics. The random number generation rate of the device can be at least 40 kb s(−1), which is the fastest record compared with previous volatile memristor-based TRNG devices. Also, its dimensionless operating principle provides high tolerance against both ambient temperature variation and device-to-device variation, enabling robust security hardware applicable in harsh environments.
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spelling pubmed-81315902021-05-24 Self-clocking fast and variation tolerant true random number generator based on a stochastic mott memristor Kim, Gwangmin In, Jae Hyun Kim, Young Seok Rhee, Hakseung Park, Woojoon Song, Hanchan Park, Juseong Kim, Kyung Min Nat Commun Article The intrinsic stochasticity of the memristor can be used to generate true random numbers, essential for non-decryptable hardware-based security devices. Here, we propose a novel and advanced method to generate true random numbers utilizing the stochastic oscillation behavior of a NbO(x) mott memristor, exhibiting self-clocking, fast and variation tolerant characteristics. The random number generation rate of the device can be at least 40 kb s(−1), which is the fastest record compared with previous volatile memristor-based TRNG devices. Also, its dimensionless operating principle provides high tolerance against both ambient temperature variation and device-to-device variation, enabling robust security hardware applicable in harsh environments. Nature Publishing Group UK 2021-05-18 /pmc/articles/PMC8131590/ /pubmed/34006879 http://dx.doi.org/10.1038/s41467-021-23184-y Text en © The Author(s) 2021 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Kim, Gwangmin
In, Jae Hyun
Kim, Young Seok
Rhee, Hakseung
Park, Woojoon
Song, Hanchan
Park, Juseong
Kim, Kyung Min
Self-clocking fast and variation tolerant true random number generator based on a stochastic mott memristor
title Self-clocking fast and variation tolerant true random number generator based on a stochastic mott memristor
title_full Self-clocking fast and variation tolerant true random number generator based on a stochastic mott memristor
title_fullStr Self-clocking fast and variation tolerant true random number generator based on a stochastic mott memristor
title_full_unstemmed Self-clocking fast and variation tolerant true random number generator based on a stochastic mott memristor
title_short Self-clocking fast and variation tolerant true random number generator based on a stochastic mott memristor
title_sort self-clocking fast and variation tolerant true random number generator based on a stochastic mott memristor
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8131590/
https://www.ncbi.nlm.nih.gov/pubmed/34006879
http://dx.doi.org/10.1038/s41467-021-23184-y
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