Post-annealing Effect on Optical and Electronic Properties of Thermally Evaporated MoO(X) Thin Films as Hole-Selective Contacts for p-Si Solar Cells

Owing to its large work function, MoO(X) has been widely used for hole-selective contact in both thin film and crystalline silicon solar cells. In this work, thermally evaporated MoO(X) films are employed on the rear sides of p-type crystalline silicon (p-Si) solar cells, where the optical and elect...

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Autores principales: Jiang, Yuanwei, Cao, Shuangying, Lu, Linfeng, Du, Guanlin, Lin, Yinyue, Wang, Jilei, Yang, Liyou, Zhu, Wenqing, Li, Dongdong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2021
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8134614/
https://www.ncbi.nlm.nih.gov/pubmed/34009527
http://dx.doi.org/10.1186/s11671-021-03544-9
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author Jiang, Yuanwei
Cao, Shuangying
Lu, Linfeng
Du, Guanlin
Lin, Yinyue
Wang, Jilei
Yang, Liyou
Zhu, Wenqing
Li, Dongdong
author_facet Jiang, Yuanwei
Cao, Shuangying
Lu, Linfeng
Du, Guanlin
Lin, Yinyue
Wang, Jilei
Yang, Liyou
Zhu, Wenqing
Li, Dongdong
author_sort Jiang, Yuanwei
collection PubMed
description Owing to its large work function, MoO(X) has been widely used for hole-selective contact in both thin film and crystalline silicon solar cells. In this work, thermally evaporated MoO(X) films are employed on the rear sides of p-type crystalline silicon (p-Si) solar cells, where the optical and electronic properties of the MoO(X) films as well as the corresponding device performances are investigated as a function of post-annealing treatment. The MoO(X) film annealed at 100 °C shows the highest work function and proves the best hole selectivity based on the results of energy band simulation and contact resistivity measurements. The full rear p-Si/MoO(X)/Ag-contacted solar cells demonstrate the best performance with an efficiency of 19.19%, which is the result of the combined influence of MoO(X)’s hole selectivity and passivation ability. SUPPLEMENTARY INFORMATION: The online version contains supplementary material available at 10.1186/s11671-021-03544-9.
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spelling pubmed-81346142021-05-20 Post-annealing Effect on Optical and Electronic Properties of Thermally Evaporated MoO(X) Thin Films as Hole-Selective Contacts for p-Si Solar Cells Jiang, Yuanwei Cao, Shuangying Lu, Linfeng Du, Guanlin Lin, Yinyue Wang, Jilei Yang, Liyou Zhu, Wenqing Li, Dongdong Nanoscale Res Lett Nano Express Owing to its large work function, MoO(X) has been widely used for hole-selective contact in both thin film and crystalline silicon solar cells. In this work, thermally evaporated MoO(X) films are employed on the rear sides of p-type crystalline silicon (p-Si) solar cells, where the optical and electronic properties of the MoO(X) films as well as the corresponding device performances are investigated as a function of post-annealing treatment. The MoO(X) film annealed at 100 °C shows the highest work function and proves the best hole selectivity based on the results of energy band simulation and contact resistivity measurements. The full rear p-Si/MoO(X)/Ag-contacted solar cells demonstrate the best performance with an efficiency of 19.19%, which is the result of the combined influence of MoO(X)’s hole selectivity and passivation ability. SUPPLEMENTARY INFORMATION: The online version contains supplementary material available at 10.1186/s11671-021-03544-9. Springer US 2021-05-19 /pmc/articles/PMC8134614/ /pubmed/34009527 http://dx.doi.org/10.1186/s11671-021-03544-9 Text en © The Author(s) 2021 https://creativecommons.org/licenses/by/4.0/Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Nano Express
Jiang, Yuanwei
Cao, Shuangying
Lu, Linfeng
Du, Guanlin
Lin, Yinyue
Wang, Jilei
Yang, Liyou
Zhu, Wenqing
Li, Dongdong
Post-annealing Effect on Optical and Electronic Properties of Thermally Evaporated MoO(X) Thin Films as Hole-Selective Contacts for p-Si Solar Cells
title Post-annealing Effect on Optical and Electronic Properties of Thermally Evaporated MoO(X) Thin Films as Hole-Selective Contacts for p-Si Solar Cells
title_full Post-annealing Effect on Optical and Electronic Properties of Thermally Evaporated MoO(X) Thin Films as Hole-Selective Contacts for p-Si Solar Cells
title_fullStr Post-annealing Effect on Optical and Electronic Properties of Thermally Evaporated MoO(X) Thin Films as Hole-Selective Contacts for p-Si Solar Cells
title_full_unstemmed Post-annealing Effect on Optical and Electronic Properties of Thermally Evaporated MoO(X) Thin Films as Hole-Selective Contacts for p-Si Solar Cells
title_short Post-annealing Effect on Optical and Electronic Properties of Thermally Evaporated MoO(X) Thin Films as Hole-Selective Contacts for p-Si Solar Cells
title_sort post-annealing effect on optical and electronic properties of thermally evaporated moo(x) thin films as hole-selective contacts for p-si solar cells
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8134614/
https://www.ncbi.nlm.nih.gov/pubmed/34009527
http://dx.doi.org/10.1186/s11671-021-03544-9
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