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Self-rectifying resistive memory in passive crossbar arrays
Conventional computing architectures are poor suited to the unique workload demands of deep learning, which has led to a surge in interest in memory-centric computing. Herein, a trilayer (Hf(0.8)Si(0.2)O(2)/Al(2)O(3)/Hf(0.5)Si(0.5)O(2))-based self-rectifying resistive memory cell (SRMC) that exhibit...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8137934/ https://www.ncbi.nlm.nih.gov/pubmed/34016978 http://dx.doi.org/10.1038/s41467-021-23180-2 |