Gate-tuned anomalous Hall effect driven by Rashba splitting in intermixed LaAlO(3)/GdTiO(3)/SrTiO(3)

The Anomalous Hall Effect (AHE) is an important quantity in determining the properties and understanding the behaviour of the two-dimensional electron system forming at the interface of SrTiO(3)-based oxide heterostructures. The occurrence of AHE is often interpreted as a signature of ferromagnetism...

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Detalles Bibliográficos
Autores principales: Lebedev, N., Stehno, M., Rana, A., Reith, P., Gauquelin, N., Verbeeck, J., Hilgenkamp, H., Brinkman, A., Aarts, J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8140084/
https://www.ncbi.nlm.nih.gov/pubmed/34021190
http://dx.doi.org/10.1038/s41598-021-89767-3

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