High-Performance Resistive Switching in Solution-Derived IGZO:N Memristors by Microwave-Assisted Nitridation

In this study, we implemented a high-performance two-terminal memristor device with a metal/insulator/metal (MIM) structure using a solution-derived In-Ga-Zn-Oxide (IGZO)-based nanocomposite as a resistive switching (RS) layer. In order to secure stable memristive switching characteristics, IGZO:N n...

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Detalles Bibliográficos
Autores principales: Min, Shin-Yi, Cho, Won-Ju
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8143479/
https://www.ncbi.nlm.nih.gov/pubmed/33922130
http://dx.doi.org/10.3390/nano11051081

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8143479/
https://www.ncbi.nlm.nih.gov/pubmed/33922130
http://dx.doi.org/10.3390/nano11051081

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