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Highly Conductive Al/Al Interfaces in Ultrafine Grained Al Compact Prepared by Low Oxygen Powder Metallurgy Technique
The low oxygen powder metallurgy technique makes it possible to prepare full-dense ultrafine-grained (UFG) Al compacts with an average grain size of 160 nm by local surface bonding at a substantially lower temperature of 423 K from an Al nanopowder prepared by a low oxygen induction thermal plasma p...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8145279/ https://www.ncbi.nlm.nih.gov/pubmed/33946182 http://dx.doi.org/10.3390/nano11051182 |
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author | Kim, Dasom Hirayama, Yusuke Liu, Zheng Kwon, Hansang Kobashi, Makoto Takagi, Kenta |
author_facet | Kim, Dasom Hirayama, Yusuke Liu, Zheng Kwon, Hansang Kobashi, Makoto Takagi, Kenta |
author_sort | Kim, Dasom |
collection | PubMed |
description | The low oxygen powder metallurgy technique makes it possible to prepare full-dense ultrafine-grained (UFG) Al compacts with an average grain size of 160 nm by local surface bonding at a substantially lower temperature of 423 K from an Al nanopowder prepared by a low oxygen induction thermal plasma process. By atomic level analysis using transmission electron microscopy, it was found that there was almost no oxide layer at the Al/Al interfaces (grain boundaries) in UFG Al compact. The electrical conductivity of the UFG Al compact reached 3.5 × 10(7) S/m, which is the same level as that of the cast Al bulk. The Vickers hardness of the UFG Al compact of 1078 MPa, which is 8 times that of the cast Al bulk, could be explained by the Hall–Petch law. In addition, fracture behavior was analyzed by conducting a small punch test. The as-sintered UFG Al compact initially fractured before reaching its ultimate strength due to its large number of grain boundaries with a high misorientation angle. Ultimate strength and elongation were enhanced to 175 MPa and 24%, respectively, by reduction of grain boundaries after annealing, indicating that high compatibility of strength and elongation can be realized by appropriate microstructure control. |
format | Online Article Text |
id | pubmed-8145279 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-81452792021-05-26 Highly Conductive Al/Al Interfaces in Ultrafine Grained Al Compact Prepared by Low Oxygen Powder Metallurgy Technique Kim, Dasom Hirayama, Yusuke Liu, Zheng Kwon, Hansang Kobashi, Makoto Takagi, Kenta Nanomaterials (Basel) Article The low oxygen powder metallurgy technique makes it possible to prepare full-dense ultrafine-grained (UFG) Al compacts with an average grain size of 160 nm by local surface bonding at a substantially lower temperature of 423 K from an Al nanopowder prepared by a low oxygen induction thermal plasma process. By atomic level analysis using transmission electron microscopy, it was found that there was almost no oxide layer at the Al/Al interfaces (grain boundaries) in UFG Al compact. The electrical conductivity of the UFG Al compact reached 3.5 × 10(7) S/m, which is the same level as that of the cast Al bulk. The Vickers hardness of the UFG Al compact of 1078 MPa, which is 8 times that of the cast Al bulk, could be explained by the Hall–Petch law. In addition, fracture behavior was analyzed by conducting a small punch test. The as-sintered UFG Al compact initially fractured before reaching its ultimate strength due to its large number of grain boundaries with a high misorientation angle. Ultimate strength and elongation were enhanced to 175 MPa and 24%, respectively, by reduction of grain boundaries after annealing, indicating that high compatibility of strength and elongation can be realized by appropriate microstructure control. MDPI 2021-04-30 /pmc/articles/PMC8145279/ /pubmed/33946182 http://dx.doi.org/10.3390/nano11051182 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Kim, Dasom Hirayama, Yusuke Liu, Zheng Kwon, Hansang Kobashi, Makoto Takagi, Kenta Highly Conductive Al/Al Interfaces in Ultrafine Grained Al Compact Prepared by Low Oxygen Powder Metallurgy Technique |
title | Highly Conductive Al/Al Interfaces in Ultrafine Grained Al Compact Prepared by Low Oxygen Powder Metallurgy Technique |
title_full | Highly Conductive Al/Al Interfaces in Ultrafine Grained Al Compact Prepared by Low Oxygen Powder Metallurgy Technique |
title_fullStr | Highly Conductive Al/Al Interfaces in Ultrafine Grained Al Compact Prepared by Low Oxygen Powder Metallurgy Technique |
title_full_unstemmed | Highly Conductive Al/Al Interfaces in Ultrafine Grained Al Compact Prepared by Low Oxygen Powder Metallurgy Technique |
title_short | Highly Conductive Al/Al Interfaces in Ultrafine Grained Al Compact Prepared by Low Oxygen Powder Metallurgy Technique |
title_sort | highly conductive al/al interfaces in ultrafine grained al compact prepared by low oxygen powder metallurgy technique |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8145279/ https://www.ncbi.nlm.nih.gov/pubmed/33946182 http://dx.doi.org/10.3390/nano11051182 |
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