Cargando…

Highly Conductive Al/Al Interfaces in Ultrafine Grained Al Compact Prepared by Low Oxygen Powder Metallurgy Technique

The low oxygen powder metallurgy technique makes it possible to prepare full-dense ultrafine-grained (UFG) Al compacts with an average grain size of 160 nm by local surface bonding at a substantially lower temperature of 423 K from an Al nanopowder prepared by a low oxygen induction thermal plasma p...

Descripción completa

Detalles Bibliográficos
Autores principales: Kim, Dasom, Hirayama, Yusuke, Liu, Zheng, Kwon, Hansang, Kobashi, Makoto, Takagi, Kenta
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8145279/
https://www.ncbi.nlm.nih.gov/pubmed/33946182
http://dx.doi.org/10.3390/nano11051182
_version_ 1783697136871800832
author Kim, Dasom
Hirayama, Yusuke
Liu, Zheng
Kwon, Hansang
Kobashi, Makoto
Takagi, Kenta
author_facet Kim, Dasom
Hirayama, Yusuke
Liu, Zheng
Kwon, Hansang
Kobashi, Makoto
Takagi, Kenta
author_sort Kim, Dasom
collection PubMed
description The low oxygen powder metallurgy technique makes it possible to prepare full-dense ultrafine-grained (UFG) Al compacts with an average grain size of 160 nm by local surface bonding at a substantially lower temperature of 423 K from an Al nanopowder prepared by a low oxygen induction thermal plasma process. By atomic level analysis using transmission electron microscopy, it was found that there was almost no oxide layer at the Al/Al interfaces (grain boundaries) in UFG Al compact. The electrical conductivity of the UFG Al compact reached 3.5 × 10(7) S/m, which is the same level as that of the cast Al bulk. The Vickers hardness of the UFG Al compact of 1078 MPa, which is 8 times that of the cast Al bulk, could be explained by the Hall–Petch law. In addition, fracture behavior was analyzed by conducting a small punch test. The as-sintered UFG Al compact initially fractured before reaching its ultimate strength due to its large number of grain boundaries with a high misorientation angle. Ultimate strength and elongation were enhanced to 175 MPa and 24%, respectively, by reduction of grain boundaries after annealing, indicating that high compatibility of strength and elongation can be realized by appropriate microstructure control.
format Online
Article
Text
id pubmed-8145279
institution National Center for Biotechnology Information
language English
publishDate 2021
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-81452792021-05-26 Highly Conductive Al/Al Interfaces in Ultrafine Grained Al Compact Prepared by Low Oxygen Powder Metallurgy Technique Kim, Dasom Hirayama, Yusuke Liu, Zheng Kwon, Hansang Kobashi, Makoto Takagi, Kenta Nanomaterials (Basel) Article The low oxygen powder metallurgy technique makes it possible to prepare full-dense ultrafine-grained (UFG) Al compacts with an average grain size of 160 nm by local surface bonding at a substantially lower temperature of 423 K from an Al nanopowder prepared by a low oxygen induction thermal plasma process. By atomic level analysis using transmission electron microscopy, it was found that there was almost no oxide layer at the Al/Al interfaces (grain boundaries) in UFG Al compact. The electrical conductivity of the UFG Al compact reached 3.5 × 10(7) S/m, which is the same level as that of the cast Al bulk. The Vickers hardness of the UFG Al compact of 1078 MPa, which is 8 times that of the cast Al bulk, could be explained by the Hall–Petch law. In addition, fracture behavior was analyzed by conducting a small punch test. The as-sintered UFG Al compact initially fractured before reaching its ultimate strength due to its large number of grain boundaries with a high misorientation angle. Ultimate strength and elongation were enhanced to 175 MPa and 24%, respectively, by reduction of grain boundaries after annealing, indicating that high compatibility of strength and elongation can be realized by appropriate microstructure control. MDPI 2021-04-30 /pmc/articles/PMC8145279/ /pubmed/33946182 http://dx.doi.org/10.3390/nano11051182 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Kim, Dasom
Hirayama, Yusuke
Liu, Zheng
Kwon, Hansang
Kobashi, Makoto
Takagi, Kenta
Highly Conductive Al/Al Interfaces in Ultrafine Grained Al Compact Prepared by Low Oxygen Powder Metallurgy Technique
title Highly Conductive Al/Al Interfaces in Ultrafine Grained Al Compact Prepared by Low Oxygen Powder Metallurgy Technique
title_full Highly Conductive Al/Al Interfaces in Ultrafine Grained Al Compact Prepared by Low Oxygen Powder Metallurgy Technique
title_fullStr Highly Conductive Al/Al Interfaces in Ultrafine Grained Al Compact Prepared by Low Oxygen Powder Metallurgy Technique
title_full_unstemmed Highly Conductive Al/Al Interfaces in Ultrafine Grained Al Compact Prepared by Low Oxygen Powder Metallurgy Technique
title_short Highly Conductive Al/Al Interfaces in Ultrafine Grained Al Compact Prepared by Low Oxygen Powder Metallurgy Technique
title_sort highly conductive al/al interfaces in ultrafine grained al compact prepared by low oxygen powder metallurgy technique
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8145279/
https://www.ncbi.nlm.nih.gov/pubmed/33946182
http://dx.doi.org/10.3390/nano11051182
work_keys_str_mv AT kimdasom highlyconductivealalinterfacesinultrafinegrainedalcompactpreparedbylowoxygenpowdermetallurgytechnique
AT hirayamayusuke highlyconductivealalinterfacesinultrafinegrainedalcompactpreparedbylowoxygenpowdermetallurgytechnique
AT liuzheng highlyconductivealalinterfacesinultrafinegrainedalcompactpreparedbylowoxygenpowdermetallurgytechnique
AT kwonhansang highlyconductivealalinterfacesinultrafinegrainedalcompactpreparedbylowoxygenpowdermetallurgytechnique
AT kobashimakoto highlyconductivealalinterfacesinultrafinegrainedalcompactpreparedbylowoxygenpowdermetallurgytechnique
AT takagikenta highlyconductivealalinterfacesinultrafinegrainedalcompactpreparedbylowoxygenpowdermetallurgytechnique