Dielectric Relaxation Behavior of BTO/LSMO Heterojunction

The BaTiO(3) (BTO)/La(0.7)Sr(0.3)MnO(3) (LSMO) magnetoelectric composite films were prepared by sol-gel method on STO (001) substrates. The heterojunction has highly preferred orientation and exhibits well ferroelectric properties with perfect hysteresis loops and microscopic polarization switch behaviors. The most interesting thing is the abnormal dielectric relaxation phenomenon in the dielectric spectra at high frequency range and around the phase transition temperature of LSMO. By analyzing the resistance properties of LSMO films, it is indicated that charge-based interfacial coupling, Maxwell-Wagner effect due to the JT polaron and fast resistivity rise in LSMO layer is the main reason. This work emphasizes the crucial role of resistivity exchanges and of carrier accumulation at interfaces for the application of magnetoelectric heterojunction.