Structural and Electrochemical Analysis of CIGS: Cr Crystalline Nanopowders and Thin Films Deposited onto ITO Substrates

A new approach for the synthesis of nanopowders and thin films of CuInGaSe(2) (CIGS) chalcopyrite material doped with different amounts of Cr is presented. The chalcopyrite material CuIn(x)Ga(1 − x)Se(2) was doped using Cr to form a new doped chalcopyrite with the structure CuInxCr(y)Ga(1 − x − y)Se(2), where x = 0.4 and y = 0.0, 0.1, 0.2, or 0.3. The electrical properties of CuIn(x) Cr(y)Ga(1 − x − y)Se(2) are highly dependent on the Cr content and results show these materials as promising dopants for the fabrication thin film solar cells. The CIGS nano-precursor powder was initially synthesized via an autoclave method, and then converted into thin films over transparent substrates. Both crystalline precursor powders and thin films deposited onto ITO substrates following a spin-coating process were subsequently characterized using XRD, SEM, HR-TEM, UV–visible and electrochemical impedance spectroscopy (EIS). EIS measurement was performed to evaluate the dc-conductivity of these novel materials as conductive films to be applied in solar cells.