Doped or Quantum-Dot Layers as In Situ Etch-Stop Indicators for III/V Semiconductor Reactive Ion Etching (RIE) Using Reflectance Anisotropy Spectroscopy (RAS)

Reflectance anisotropy spectroscopy (RAS), which was originally invented to monitor epitaxial growth, can—as we have previously shown—also be used to monitor the reactive ion etching of III/V semiconductor samples in situ and in real time, as long as the etching rate is not too high and the abrasion...

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Detalles Bibliográficos
Autores principales: Sombrio, Guilherme, Oliveira, Emerson, Strassner, Johannes, Richter, Johannes, Doering, Christoph, Fouckhardt, Henning
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8146761/
https://www.ncbi.nlm.nih.gov/pubmed/33946861
http://dx.doi.org/10.3390/mi12050502

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8146761/
https://www.ncbi.nlm.nih.gov/pubmed/33946861
http://dx.doi.org/10.3390/mi12050502

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