A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region

A novel 4H-SiC MESFET was presented, and its direct current (DC), alternating current (AC) characteristics and power added efficiency (PAE) were studied. The novel structure improves the saturation current (I(dsat)) and transconductance (g(m)) by adding a heavily doped region, reduces the gate-sourc...

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Autores principales: Jia, Hujun, Dong, Mengyu, Wang, Xiaowei, Zhu, Shunwei, Yang, Yintang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8146966/
https://www.ncbi.nlm.nih.gov/pubmed/33925861
http://dx.doi.org/10.3390/mi12050488
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author Jia, Hujun
Dong, Mengyu
Wang, Xiaowei
Zhu, Shunwei
Yang, Yintang
author_facet Jia, Hujun
Dong, Mengyu
Wang, Xiaowei
Zhu, Shunwei
Yang, Yintang
author_sort Jia, Hujun
collection PubMed
description A novel 4H-SiC MESFET was presented, and its direct current (DC), alternating current (AC) characteristics and power added efficiency (PAE) were studied. The novel structure improves the saturation current (I(dsat)) and transconductance (g(m)) by adding a heavily doped region, reduces the gate-source capacitance (C(gs)) by adding a lightly doped region and improves the breakdown voltage (V(b)) by embedding an insulated region (Si(3)N(4)). Compared to the double-recessed (DR) structure, the saturation current, the transconductance, the breakdown voltage, the maximum oscillation frequency (f(max)), the maximum power added efficiency and the maximum theoretical output power density (P(max)) of the novel structure is increased by 24%, 21%, 9%, 11%, 14% and 34%, respectively. Therefore, the novel structure has excellent performance and has a broader application prospect than the double recessed structure.
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spelling pubmed-81469662021-05-26 A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region Jia, Hujun Dong, Mengyu Wang, Xiaowei Zhu, Shunwei Yang, Yintang Micromachines (Basel) Article A novel 4H-SiC MESFET was presented, and its direct current (DC), alternating current (AC) characteristics and power added efficiency (PAE) were studied. The novel structure improves the saturation current (I(dsat)) and transconductance (g(m)) by adding a heavily doped region, reduces the gate-source capacitance (C(gs)) by adding a lightly doped region and improves the breakdown voltage (V(b)) by embedding an insulated region (Si(3)N(4)). Compared to the double-recessed (DR) structure, the saturation current, the transconductance, the breakdown voltage, the maximum oscillation frequency (f(max)), the maximum power added efficiency and the maximum theoretical output power density (P(max)) of the novel structure is increased by 24%, 21%, 9%, 11%, 14% and 34%, respectively. Therefore, the novel structure has excellent performance and has a broader application prospect than the double recessed structure. MDPI 2021-04-26 /pmc/articles/PMC8146966/ /pubmed/33925861 http://dx.doi.org/10.3390/mi12050488 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Jia, Hujun
Dong, Mengyu
Wang, Xiaowei
Zhu, Shunwei
Yang, Yintang
A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region
title A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region
title_full A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region
title_fullStr A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region
title_full_unstemmed A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region
title_short A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region
title_sort novel 4h-sic mesfet with a heavily doped region, a lightly doped region and an insulated region
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8146966/
https://www.ncbi.nlm.nih.gov/pubmed/33925861
http://dx.doi.org/10.3390/mi12050488
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