A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region

A novel 4H-SiC MESFET was presented, and its direct current (DC), alternating current (AC) characteristics and power added efficiency (PAE) were studied. The novel structure improves the saturation current (I(dsat)) and transconductance (g(m)) by adding a heavily doped region, reduces the gate-sourc...

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Detalles Bibliográficos
Autores principales: Jia, Hujun, Dong, Mengyu, Wang, Xiaowei, Zhu, Shunwei, Yang, Yintang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8146966/
https://www.ncbi.nlm.nih.gov/pubmed/33925861
http://dx.doi.org/10.3390/mi12050488

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8146966/
https://www.ncbi.nlm.nih.gov/pubmed/33925861
http://dx.doi.org/10.3390/mi12050488

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