Atomistic Simulations of Defect Production in Monolayer and Bulk Hexagonal Boron Nitride under Low- and High-Fluence Ion Irradiation

Controlled production of defects in hexagonal boron nitride (h-BN) through ion irradiation has recently been demonstrated to be an effective tool for adding new functionalities to this material, such as single-photon generation, and for developing optical quantum applications. Using analytical poten...

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Detalles Bibliográficos
Autores principales: Ghaderzadeh, Sadegh, Kretschmer, Silvan, Ghorbani-Asl, Mahdi, Hlawacek, Gregor, Krasheninnikov, Arkady V.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8147816/
https://www.ncbi.nlm.nih.gov/pubmed/34064369
http://dx.doi.org/10.3390/nano11051214

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8147816/
https://www.ncbi.nlm.nih.gov/pubmed/34064369
http://dx.doi.org/10.3390/nano11051214

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