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Low-Frequency Dielectric Relaxation in Structures Based on Macroporous Silicon with Meso-Macroporous Skin-Layer

The spectra of dielectric relaxation of macroporous silicon with a mesoporous skin layer in the frequency range 1–10(6) Hz during cooling (up to 293–173 K) and heating (293–333 K) are presented. Macroporous silicon (pore diameter ≈ 2.2–2.7 μm) with a meso-macroporous skin layer was obtained by the m...

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Autores principales: Castro, Rene, Spivak, Yulia, Shevchenko, Sergey, Moshnikov, Vyacheslav
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8151545/
https://www.ncbi.nlm.nih.gov/pubmed/34064623
http://dx.doi.org/10.3390/ma14102471
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author Castro, Rene
Spivak, Yulia
Shevchenko, Sergey
Moshnikov, Vyacheslav
author_facet Castro, Rene
Spivak, Yulia
Shevchenko, Sergey
Moshnikov, Vyacheslav
author_sort Castro, Rene
collection PubMed
description The spectra of dielectric relaxation of macroporous silicon with a mesoporous skin layer in the frequency range 1–10(6) Hz during cooling (up to 293–173 K) and heating (293–333 K) are presented. Macroporous silicon (pore diameter ≈ 2.2–2.7 μm) with a meso-macroporous skin layer was obtained by the method of electrochemical anodic dissolution of monocrystalline silicon in a Unno-Imai cell. A mesoporous skin layer with a thickness of about 100–200 nm in the form of cone-shaped nanostructures with pore diameters near 13–25 nm and sizes of skeletal part about 35–40 nm by ion-electron microscopy was observed. The temperature dependence of the relaxation of the most probable relaxation time is characterized by two linear sections with different slope values; the change in the slope character is observed at T ≈ 250 K. The features of the distribution of relaxation times in meso-macroporous silicon at temperatures of 223, 273, and 293 K are revealed. The Havriliak-Negami approach was used for approximation of the relaxation curves ε″ = f(ν). The existence of a symmetric distribution of relaxers for all temperatures was found (Cole-Cole model). A discussion of results is provided, taking into account the structure of the studied object.
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spelling pubmed-81515452021-05-27 Low-Frequency Dielectric Relaxation in Structures Based on Macroporous Silicon with Meso-Macroporous Skin-Layer Castro, Rene Spivak, Yulia Shevchenko, Sergey Moshnikov, Vyacheslav Materials (Basel) Article The spectra of dielectric relaxation of macroporous silicon with a mesoporous skin layer in the frequency range 1–10(6) Hz during cooling (up to 293–173 K) and heating (293–333 K) are presented. Macroporous silicon (pore diameter ≈ 2.2–2.7 μm) with a meso-macroporous skin layer was obtained by the method of electrochemical anodic dissolution of monocrystalline silicon in a Unno-Imai cell. A mesoporous skin layer with a thickness of about 100–200 nm in the form of cone-shaped nanostructures with pore diameters near 13–25 nm and sizes of skeletal part about 35–40 nm by ion-electron microscopy was observed. The temperature dependence of the relaxation of the most probable relaxation time is characterized by two linear sections with different slope values; the change in the slope character is observed at T ≈ 250 K. The features of the distribution of relaxation times in meso-macroporous silicon at temperatures of 223, 273, and 293 K are revealed. The Havriliak-Negami approach was used for approximation of the relaxation curves ε″ = f(ν). The existence of a symmetric distribution of relaxers for all temperatures was found (Cole-Cole model). A discussion of results is provided, taking into account the structure of the studied object. MDPI 2021-05-11 /pmc/articles/PMC8151545/ /pubmed/34064623 http://dx.doi.org/10.3390/ma14102471 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Castro, Rene
Spivak, Yulia
Shevchenko, Sergey
Moshnikov, Vyacheslav
Low-Frequency Dielectric Relaxation in Structures Based on Macroporous Silicon with Meso-Macroporous Skin-Layer
title Low-Frequency Dielectric Relaxation in Structures Based on Macroporous Silicon with Meso-Macroporous Skin-Layer
title_full Low-Frequency Dielectric Relaxation in Structures Based on Macroporous Silicon with Meso-Macroporous Skin-Layer
title_fullStr Low-Frequency Dielectric Relaxation in Structures Based on Macroporous Silicon with Meso-Macroporous Skin-Layer
title_full_unstemmed Low-Frequency Dielectric Relaxation in Structures Based on Macroporous Silicon with Meso-Macroporous Skin-Layer
title_short Low-Frequency Dielectric Relaxation in Structures Based on Macroporous Silicon with Meso-Macroporous Skin-Layer
title_sort low-frequency dielectric relaxation in structures based on macroporous silicon with meso-macroporous skin-layer
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8151545/
https://www.ncbi.nlm.nih.gov/pubmed/34064623
http://dx.doi.org/10.3390/ma14102471
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