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Electron Irradiation of Metal Contacts in Monolayer MoS(2) Field-Effect Transistors
[Image: see text] Metal contacts play a fundamental role in nanoscale devices. In this work, Schottky metal contacts in monolayer molybdenum disulfide (MoS(2)) field-effect transistors are investigated under electron beam irradiation. It is shown that the exposure of Ti/Au source/drain electrodes to...
Autores principales: | , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American
Chemical Society
2020
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8153392/ https://www.ncbi.nlm.nih.gov/pubmed/32805860 http://dx.doi.org/10.1021/acsami.0c11933 |
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author | Pelella, Aniello Kharsah, Osamah Grillo, Alessandro Urban, Francesca Passacantando, Maurizio Giubileo, Filippo Iemmo, Laura Sleziona, Stephan Pollmann, Erik Madauß, Lukas Schleberger, Marika Di Bartolomeo, Antonio |
author_facet | Pelella, Aniello Kharsah, Osamah Grillo, Alessandro Urban, Francesca Passacantando, Maurizio Giubileo, Filippo Iemmo, Laura Sleziona, Stephan Pollmann, Erik Madauß, Lukas Schleberger, Marika Di Bartolomeo, Antonio |
author_sort | Pelella, Aniello |
collection | PubMed |
description | [Image: see text] Metal contacts play a fundamental role in nanoscale devices. In this work, Schottky metal contacts in monolayer molybdenum disulfide (MoS(2)) field-effect transistors are investigated under electron beam irradiation. It is shown that the exposure of Ti/Au source/drain electrodes to an electron beam reduces the contact resistance and improves the transistor performance. The electron beam conditioning of contacts is permanent, while the irradiation of the channel can produce transient effects. It is demonstrated that irradiation lowers the Schottky barrier at the contacts because of thermally induced atom diffusion and interfacial reactions. The simulation of electron paths in the device reveals that most of the beam energy is absorbed in the metal contacts. The study demonstrates that electron beam irradiation can be effectively used for contact improvement through local annealing. |
format | Online Article Text |
id | pubmed-8153392 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | American
Chemical Society |
record_format | MEDLINE/PubMed |
spelling | pubmed-81533922021-05-27 Electron Irradiation of Metal Contacts in Monolayer MoS(2) Field-Effect Transistors Pelella, Aniello Kharsah, Osamah Grillo, Alessandro Urban, Francesca Passacantando, Maurizio Giubileo, Filippo Iemmo, Laura Sleziona, Stephan Pollmann, Erik Madauß, Lukas Schleberger, Marika Di Bartolomeo, Antonio ACS Appl Mater Interfaces [Image: see text] Metal contacts play a fundamental role in nanoscale devices. In this work, Schottky metal contacts in monolayer molybdenum disulfide (MoS(2)) field-effect transistors are investigated under electron beam irradiation. It is shown that the exposure of Ti/Au source/drain electrodes to an electron beam reduces the contact resistance and improves the transistor performance. The electron beam conditioning of contacts is permanent, while the irradiation of the channel can produce transient effects. It is demonstrated that irradiation lowers the Schottky barrier at the contacts because of thermally induced atom diffusion and interfacial reactions. The simulation of electron paths in the device reveals that most of the beam energy is absorbed in the metal contacts. The study demonstrates that electron beam irradiation can be effectively used for contact improvement through local annealing. American Chemical Society 2020-08-10 2020-09-09 /pmc/articles/PMC8153392/ /pubmed/32805860 http://dx.doi.org/10.1021/acsami.0c11933 Text en Permits the broadest form of re-use including for commercial purposes, provided that author attribution and integrity are maintained (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Pelella, Aniello Kharsah, Osamah Grillo, Alessandro Urban, Francesca Passacantando, Maurizio Giubileo, Filippo Iemmo, Laura Sleziona, Stephan Pollmann, Erik Madauß, Lukas Schleberger, Marika Di Bartolomeo, Antonio Electron Irradiation of Metal Contacts in Monolayer MoS(2) Field-Effect Transistors |
title | Electron
Irradiation of Metal Contacts in Monolayer
MoS(2) Field-Effect Transistors |
title_full | Electron
Irradiation of Metal Contacts in Monolayer
MoS(2) Field-Effect Transistors |
title_fullStr | Electron
Irradiation of Metal Contacts in Monolayer
MoS(2) Field-Effect Transistors |
title_full_unstemmed | Electron
Irradiation of Metal Contacts in Monolayer
MoS(2) Field-Effect Transistors |
title_short | Electron
Irradiation of Metal Contacts in Monolayer
MoS(2) Field-Effect Transistors |
title_sort | electron
irradiation of metal contacts in monolayer
mos(2) field-effect transistors |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8153392/ https://www.ncbi.nlm.nih.gov/pubmed/32805860 http://dx.doi.org/10.1021/acsami.0c11933 |
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