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Self-Assembled Monolayers: Versatile Uses in Electronic Devices from Gate Dielectrics, Dopants, and Biosensing Linkers

Self-assembled monolayers (SAMs), molecular structures consisting of assemblies formed in an ordered monolayer domain, are revisited to introduce their various functions in electronic devices. SAMs have been used as ultrathin gate dielectric layers in low-voltage transistors owing to their molecular...

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Autores principales: Kim, Seongjae, Yoo, Hocheon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8155888/
https://www.ncbi.nlm.nih.gov/pubmed/34067620
http://dx.doi.org/10.3390/mi12050565
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author Kim, Seongjae
Yoo, Hocheon
author_facet Kim, Seongjae
Yoo, Hocheon
author_sort Kim, Seongjae
collection PubMed
description Self-assembled monolayers (SAMs), molecular structures consisting of assemblies formed in an ordered monolayer domain, are revisited to introduce their various functions in electronic devices. SAMs have been used as ultrathin gate dielectric layers in low-voltage transistors owing to their molecularly thin nature. In addition to the contribution of SAMs as gate dielectric layers, SAMs contribute to the transistor as a semiconducting active layer. Beyond the transistor components, SAMs have recently been applied in other electronic applications, including as remote doping materials and molecular linkers to anchor target biomarkers. This review comprehensively covers SAM-based electronic devices, focusing on the various applications that utilize the physical and chemical properties of SAMs.
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spelling pubmed-81558882021-05-28 Self-Assembled Monolayers: Versatile Uses in Electronic Devices from Gate Dielectrics, Dopants, and Biosensing Linkers Kim, Seongjae Yoo, Hocheon Micromachines (Basel) Review Self-assembled monolayers (SAMs), molecular structures consisting of assemblies formed in an ordered monolayer domain, are revisited to introduce their various functions in electronic devices. SAMs have been used as ultrathin gate dielectric layers in low-voltage transistors owing to their molecularly thin nature. In addition to the contribution of SAMs as gate dielectric layers, SAMs contribute to the transistor as a semiconducting active layer. Beyond the transistor components, SAMs have recently been applied in other electronic applications, including as remote doping materials and molecular linkers to anchor target biomarkers. This review comprehensively covers SAM-based electronic devices, focusing on the various applications that utilize the physical and chemical properties of SAMs. MDPI 2021-05-17 /pmc/articles/PMC8155888/ /pubmed/34067620 http://dx.doi.org/10.3390/mi12050565 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Review
Kim, Seongjae
Yoo, Hocheon
Self-Assembled Monolayers: Versatile Uses in Electronic Devices from Gate Dielectrics, Dopants, and Biosensing Linkers
title Self-Assembled Monolayers: Versatile Uses in Electronic Devices from Gate Dielectrics, Dopants, and Biosensing Linkers
title_full Self-Assembled Monolayers: Versatile Uses in Electronic Devices from Gate Dielectrics, Dopants, and Biosensing Linkers
title_fullStr Self-Assembled Monolayers: Versatile Uses in Electronic Devices from Gate Dielectrics, Dopants, and Biosensing Linkers
title_full_unstemmed Self-Assembled Monolayers: Versatile Uses in Electronic Devices from Gate Dielectrics, Dopants, and Biosensing Linkers
title_short Self-Assembled Monolayers: Versatile Uses in Electronic Devices from Gate Dielectrics, Dopants, and Biosensing Linkers
title_sort self-assembled monolayers: versatile uses in electronic devices from gate dielectrics, dopants, and biosensing linkers
topic Review
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8155888/
https://www.ncbi.nlm.nih.gov/pubmed/34067620
http://dx.doi.org/10.3390/mi12050565
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