Cargando…

A Novel Poly-N-Epoxy Propyl Carbazole Based Memory Device

Generally, polymer-based memory devices store information in a manner distinct from that of silicon-based memory devices. Conventional silicon memory devices store charges as either zero or one for digital information, whereas most polymers store charges by the switching of electrical resistance. Fo...

Descripción completa

Detalles Bibliográficos
Autores principales: Alahmadi, Ahmed. N. M., Karimov, Khasan S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8156368/
https://www.ncbi.nlm.nih.gov/pubmed/34063395
http://dx.doi.org/10.3390/polym13101594
Descripción
Sumario:Generally, polymer-based memory devices store information in a manner distinct from that of silicon-based memory devices. Conventional silicon memory devices store charges as either zero or one for digital information, whereas most polymers store charges by the switching of electrical resistance. For the first time, this study reports that the novel conducting polymer Poly-N-Epoxy-Propyl Carbazole (PEPC) can offer effective memory storage behavior. In the current research, the electrical characterization of a single layer memory device (metal/polymer/metal) using PEPC, with or without doping of charge transfer complexes 7,7,8,8-tetra-cyanoquino-dimethane (TCNQ), was investigated. From the current–voltage characteristics, it was found that PEPC shows memory switching effects in both cases (with or without the TCNQ complex). However, in the presence of TCNQ, the PEPC performs faster memory switching at relatively lower voltage and, therefore, a higher ON and OFF ratio (I(ON)/I(OFF) ~ 100) was observed. The outcome of this study may help to further understand the memory switching effects of conducting polymer.