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Optimization of Hybrid Ink Formulation and IPL Sintering Process for Ink-Jet 3D Printing

Ink-jet 3D printing technology facilitates the use of various materials of ink on each ink-jet head and simultaneous printing of multiple materials. It is suitable for manufacturing to process a complex multifunctional structure such as sensors and printed circuit boards. In this study, a complex st...

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Detalles Bibliográficos
Autores principales: Lee, Jae-Young, Choi, Cheong-Soo, Hwang, Kwang-Taek, Han, Kyu-Sung, Kim, Jin-Ho, Nahm, Sahn, Kim, Bum-Seok
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8157234/
https://www.ncbi.nlm.nih.gov/pubmed/34069153
http://dx.doi.org/10.3390/nano11051295
Descripción
Sumario:Ink-jet 3D printing technology facilitates the use of various materials of ink on each ink-jet head and simultaneous printing of multiple materials. It is suitable for manufacturing to process a complex multifunctional structure such as sensors and printed circuit boards. In this study, a complex structure of a SiO(2) insulation layer and a conductive Cu layer was fabricated with photo-curable nano SiO(2) ink and Intense Pulsed Light (IPL)-sinterable Cu nano ink using multi-material ink-jet 3D printing technology. A precise photo-cured SiO(2) insulation layer was designed by optimizing the operating conditions and the ink rheological properties, and the resistance of the insulation layer was 2.43 × 10(13) Ω·cm. On the photo-cured SiO(2) insulation layer, a Cu conductive layer was printed by controlling droplet distance. The sintering of the IPL-sinterable nano Cu ink was performed using an IPL sintering process, and electrical and mechanical properties were confirmed according to the annealing temperature and applied voltage. Then, Cu conductive layer was annealed at 100 °C to remove the solvent, and IPL sintered at 700 V. The Cu conductive layer of the complex structure had an electrical property of 29 µΩ·cm and an adhesive property with SiO(2) insulation layer of 5B.