Cargando…
Effects of Thermal Annealing on the Properties of Zirconium-Doped Mg(x)Zn(1−X)O Films Obtained through Radio-Frequency Magnetron Sputtering
Zirconium-doped Mg(x)Zn(1−x)O (Zr-doped MZO) mixed-oxide films were investigated, and the temperature sensitivity of their electric and optical properties was characterized. Zr-doped MZO films were deposited through radio-frequency magnetron sputtering using a 4-inch ZnO/MgO/ZrO(2) (75/20/5 wt%) tar...
Autores principales: | , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8160718/ https://www.ncbi.nlm.nih.gov/pubmed/34065275 http://dx.doi.org/10.3390/membranes11050373 |
_version_ | 1783700344524505088 |
---|---|
author | Lin, Wen-Yen Chien, Feng-Tsun Chiu, Hsien-Chin Sheu, Jinn-Kong Hsueh, Kuang-Po |
author_facet | Lin, Wen-Yen Chien, Feng-Tsun Chiu, Hsien-Chin Sheu, Jinn-Kong Hsueh, Kuang-Po |
author_sort | Lin, Wen-Yen |
collection | PubMed |
description | Zirconium-doped Mg(x)Zn(1−x)O (Zr-doped MZO) mixed-oxide films were investigated, and the temperature sensitivity of their electric and optical properties was characterized. Zr-doped MZO films were deposited through radio-frequency magnetron sputtering using a 4-inch ZnO/MgO/ZrO(2) (75/20/5 wt%) target. Hall measurement, X-ray diffraction (XRD), transmittance, and X-ray photoelectron spectroscopy (XPS) data were obtained. The lowest sheet resistance, highest mobility, and highest concentration were 1.30 × 10(3) Ω/sq, 4.46 cm(2)/Vs, and 7.28 × 10(19) cm(−3), respectively. The XRD spectra of the as-grown and annealed Zr-doped MZO films contained Mg(x)Zn(1−x)O(002) and ZrO(2)(200) coupled with Mg(OH)(2)(101) at 34.49°, 34.88°, and 38.017°, respectively. The intensity of the XRD peak near 34.88° decreased with temperature because the films that segregated Zr(4+) from ZrO(2)(200) increased. The absorption edges of the films were at approximately 348 nm under 80% transmittance because of the Mg content. XPS revealed that the amount of Zr(4+) increased with the annealing temperature. Zr is a potentially promising double donor, providing up to two extra free electrons per ion when used in place of Zn(2+). |
format | Online Article Text |
id | pubmed-8160718 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-81607182021-05-29 Effects of Thermal Annealing on the Properties of Zirconium-Doped Mg(x)Zn(1−X)O Films Obtained through Radio-Frequency Magnetron Sputtering Lin, Wen-Yen Chien, Feng-Tsun Chiu, Hsien-Chin Sheu, Jinn-Kong Hsueh, Kuang-Po Membranes (Basel) Article Zirconium-doped Mg(x)Zn(1−x)O (Zr-doped MZO) mixed-oxide films were investigated, and the temperature sensitivity of their electric and optical properties was characterized. Zr-doped MZO films were deposited through radio-frequency magnetron sputtering using a 4-inch ZnO/MgO/ZrO(2) (75/20/5 wt%) target. Hall measurement, X-ray diffraction (XRD), transmittance, and X-ray photoelectron spectroscopy (XPS) data were obtained. The lowest sheet resistance, highest mobility, and highest concentration were 1.30 × 10(3) Ω/sq, 4.46 cm(2)/Vs, and 7.28 × 10(19) cm(−3), respectively. The XRD spectra of the as-grown and annealed Zr-doped MZO films contained Mg(x)Zn(1−x)O(002) and ZrO(2)(200) coupled with Mg(OH)(2)(101) at 34.49°, 34.88°, and 38.017°, respectively. The intensity of the XRD peak near 34.88° decreased with temperature because the films that segregated Zr(4+) from ZrO(2)(200) increased. The absorption edges of the films were at approximately 348 nm under 80% transmittance because of the Mg content. XPS revealed that the amount of Zr(4+) increased with the annealing temperature. Zr is a potentially promising double donor, providing up to two extra free electrons per ion when used in place of Zn(2+). MDPI 2021-05-20 /pmc/articles/PMC8160718/ /pubmed/34065275 http://dx.doi.org/10.3390/membranes11050373 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Lin, Wen-Yen Chien, Feng-Tsun Chiu, Hsien-Chin Sheu, Jinn-Kong Hsueh, Kuang-Po Effects of Thermal Annealing on the Properties of Zirconium-Doped Mg(x)Zn(1−X)O Films Obtained through Radio-Frequency Magnetron Sputtering |
title | Effects of Thermal Annealing on the Properties of Zirconium-Doped Mg(x)Zn(1−X)O Films Obtained through Radio-Frequency Magnetron Sputtering |
title_full | Effects of Thermal Annealing on the Properties of Zirconium-Doped Mg(x)Zn(1−X)O Films Obtained through Radio-Frequency Magnetron Sputtering |
title_fullStr | Effects of Thermal Annealing on the Properties of Zirconium-Doped Mg(x)Zn(1−X)O Films Obtained through Radio-Frequency Magnetron Sputtering |
title_full_unstemmed | Effects of Thermal Annealing on the Properties of Zirconium-Doped Mg(x)Zn(1−X)O Films Obtained through Radio-Frequency Magnetron Sputtering |
title_short | Effects of Thermal Annealing on the Properties of Zirconium-Doped Mg(x)Zn(1−X)O Films Obtained through Radio-Frequency Magnetron Sputtering |
title_sort | effects of thermal annealing on the properties of zirconium-doped mg(x)zn(1−x)o films obtained through radio-frequency magnetron sputtering |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8160718/ https://www.ncbi.nlm.nih.gov/pubmed/34065275 http://dx.doi.org/10.3390/membranes11050373 |
work_keys_str_mv | AT linwenyen effectsofthermalannealingonthepropertiesofzirconiumdopedmgxzn1xofilmsobtainedthroughradiofrequencymagnetronsputtering AT chienfengtsun effectsofthermalannealingonthepropertiesofzirconiumdopedmgxzn1xofilmsobtainedthroughradiofrequencymagnetronsputtering AT chiuhsienchin effectsofthermalannealingonthepropertiesofzirconiumdopedmgxzn1xofilmsobtainedthroughradiofrequencymagnetronsputtering AT sheujinnkong effectsofthermalannealingonthepropertiesofzirconiumdopedmgxzn1xofilmsobtainedthroughradiofrequencymagnetronsputtering AT hsuehkuangpo effectsofthermalannealingonthepropertiesofzirconiumdopedmgxzn1xofilmsobtainedthroughradiofrequencymagnetronsputtering |