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Behavior of Silicon Carbide Materials under Dry to Hydrothermal Conditions
Silicon carbide materials are excellent candidates for high-performance applications due to their outstanding thermomechanical properties and their strong corrosion resistance. SiC materials can be processed in various forms, from nanomaterials to continuous fibers. Common applications of SiC materi...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8161094/ https://www.ncbi.nlm.nih.gov/pubmed/34065490 http://dx.doi.org/10.3390/nano11051351 |
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author | Biscay, Nicolas Henry, Lucile Adschiri, Tadafumi Yoshimura, Masahiro Aymonier, Cyril |
author_facet | Biscay, Nicolas Henry, Lucile Adschiri, Tadafumi Yoshimura, Masahiro Aymonier, Cyril |
author_sort | Biscay, Nicolas |
collection | PubMed |
description | Silicon carbide materials are excellent candidates for high-performance applications due to their outstanding thermomechanical properties and their strong corrosion resistance. SiC materials can be processed in various forms, from nanomaterials to continuous fibers. Common applications of SiC materials include the aerospace and nuclear fields, where the material is used in severely oxidative environments. Therefore, it is important to understand the kinetics of SiC oxidation and the parameters influencing them. The first part of this review focuses on the oxidation of SiC in dry air according to the Deal and Grove model showing that the oxidation behavior of SiC depends on the temperature and the time of oxidation. The oxidation rate can also be accelerated with the presence of H(2)O in the system due to its diffusion through the oxide scales. Therefore, wet oxidation is studied in the second part. The third part details the effect of hydrothermal media on the SiC materials that has been explained by different models, namely Yoshimura (1986), Hirayama (1989) and Allongue (1992). The last part of this review focuses on the hydrothermal corrosion of SiC materials from an application point of view and determine whether it is beneficial (manufacturing of materials) or detrimental (use of SiC in latest nuclear reactors). |
format | Online Article Text |
id | pubmed-8161094 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-81610942021-05-29 Behavior of Silicon Carbide Materials under Dry to Hydrothermal Conditions Biscay, Nicolas Henry, Lucile Adschiri, Tadafumi Yoshimura, Masahiro Aymonier, Cyril Nanomaterials (Basel) Review Silicon carbide materials are excellent candidates for high-performance applications due to their outstanding thermomechanical properties and their strong corrosion resistance. SiC materials can be processed in various forms, from nanomaterials to continuous fibers. Common applications of SiC materials include the aerospace and nuclear fields, where the material is used in severely oxidative environments. Therefore, it is important to understand the kinetics of SiC oxidation and the parameters influencing them. The first part of this review focuses on the oxidation of SiC in dry air according to the Deal and Grove model showing that the oxidation behavior of SiC depends on the temperature and the time of oxidation. The oxidation rate can also be accelerated with the presence of H(2)O in the system due to its diffusion through the oxide scales. Therefore, wet oxidation is studied in the second part. The third part details the effect of hydrothermal media on the SiC materials that has been explained by different models, namely Yoshimura (1986), Hirayama (1989) and Allongue (1992). The last part of this review focuses on the hydrothermal corrosion of SiC materials from an application point of view and determine whether it is beneficial (manufacturing of materials) or detrimental (use of SiC in latest nuclear reactors). MDPI 2021-05-20 /pmc/articles/PMC8161094/ /pubmed/34065490 http://dx.doi.org/10.3390/nano11051351 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Review Biscay, Nicolas Henry, Lucile Adschiri, Tadafumi Yoshimura, Masahiro Aymonier, Cyril Behavior of Silicon Carbide Materials under Dry to Hydrothermal Conditions |
title | Behavior of Silicon Carbide Materials under Dry to Hydrothermal Conditions |
title_full | Behavior of Silicon Carbide Materials under Dry to Hydrothermal Conditions |
title_fullStr | Behavior of Silicon Carbide Materials under Dry to Hydrothermal Conditions |
title_full_unstemmed | Behavior of Silicon Carbide Materials under Dry to Hydrothermal Conditions |
title_short | Behavior of Silicon Carbide Materials under Dry to Hydrothermal Conditions |
title_sort | behavior of silicon carbide materials under dry to hydrothermal conditions |
topic | Review |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8161094/ https://www.ncbi.nlm.nih.gov/pubmed/34065490 http://dx.doi.org/10.3390/nano11051351 |
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