Cargando…

Low temperature-boosted high efficiency photo-induced charge transfer for remarkable SERS activity of ZnO nanosheets

Improving the photo-induced charge transfer (PICT) efficiency is the key factor for boosting the surface-enhanced Raman scattering (SERS) performance of semiconductor nanomaterials. Introducing plentiful surface defect states in porous ZnO nanosheets (d-ZnO NSs) effectively provides additional charg...

Descripción completa

Detalles Bibliográficos
Autores principales: Lin, Jie, Yu, Jian, Akakuru, Ozioma Udochukwu, Wang, Xiaotian, Yuan, Bo, Chen, Tianxiang, Guo, Lin, Wu, Aiguo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8162034/
https://www.ncbi.nlm.nih.gov/pubmed/34094207
http://dx.doi.org/10.1039/d0sc02712j
_version_ 1783700632132124672
author Lin, Jie
Yu, Jian
Akakuru, Ozioma Udochukwu
Wang, Xiaotian
Yuan, Bo
Chen, Tianxiang
Guo, Lin
Wu, Aiguo
author_facet Lin, Jie
Yu, Jian
Akakuru, Ozioma Udochukwu
Wang, Xiaotian
Yuan, Bo
Chen, Tianxiang
Guo, Lin
Wu, Aiguo
author_sort Lin, Jie
collection PubMed
description Improving the photo-induced charge transfer (PICT) efficiency is the key factor for boosting the surface-enhanced Raman scattering (SERS) performance of semiconductor nanomaterials. Introducing plentiful surface defect states in porous ZnO nanosheets (d-ZnO NSs) effectively provides additional charge transfer routes for highly efficient PICT within the substrate–molecule system. Significantly, an interesting phenomenon of low temperature-boosted SERS activity of these d-ZnO NSs is consequently observed. The enhanced SERS activity can be attributed to the efficient PICT processes due to the significant reduction of non-radiative recombination of surface defects at a low temperature. This is carefully investigated through combining in situ low-temperature SERS measurements with temperature-dependent photoluminescence (PL) emission spectroscopy. Our results clearly demonstrate that the weakened lattice thermal vibration at a low temperature effectively suppresses the phonon-assisted relaxation and reduces carrier traps, resulting in the increase of PL intensity. The decreased traps of photo-induced electrons at surface defect states effectively facilitate the PICT efficiency within the substrate–molecule system. An ultrahigh enhancement factor of 7.7 × 10(5) and low limit of detection (1 × 10(−7) M) for a 4-mercaptopyridine molecule at a temperature of 77 K are successfully obtained. More importantly, the low temperature-enhanced SERS effect is also obtainable in other metal oxide semiconductors, such as d-TiO(2) and d-Cu(2)O nanoparticles. To the best of our knowledge, this is the first time the low temperature-boosted SERS activity of semiconductors has been observed. This study not only provides a deep insight into the chemical SERS mechanism, but also develops a novel strategy for improving semiconductor SERS sensitivity. The strong SERS activity at a low temperature reported here may open new avenues for developing non-metal SERS substrates with new functionalities, especially for the research on cryogenic sensing and hypothermal medicine.
format Online
Article
Text
id pubmed-8162034
institution National Center for Biotechnology Information
language English
publishDate 2020
publisher The Royal Society of Chemistry
record_format MEDLINE/PubMed
spelling pubmed-81620342021-06-04 Low temperature-boosted high efficiency photo-induced charge transfer for remarkable SERS activity of ZnO nanosheets Lin, Jie Yu, Jian Akakuru, Ozioma Udochukwu Wang, Xiaotian Yuan, Bo Chen, Tianxiang Guo, Lin Wu, Aiguo Chem Sci Chemistry Improving the photo-induced charge transfer (PICT) efficiency is the key factor for boosting the surface-enhanced Raman scattering (SERS) performance of semiconductor nanomaterials. Introducing plentiful surface defect states in porous ZnO nanosheets (d-ZnO NSs) effectively provides additional charge transfer routes for highly efficient PICT within the substrate–molecule system. Significantly, an interesting phenomenon of low temperature-boosted SERS activity of these d-ZnO NSs is consequently observed. The enhanced SERS activity can be attributed to the efficient PICT processes due to the significant reduction of non-radiative recombination of surface defects at a low temperature. This is carefully investigated through combining in situ low-temperature SERS measurements with temperature-dependent photoluminescence (PL) emission spectroscopy. Our results clearly demonstrate that the weakened lattice thermal vibration at a low temperature effectively suppresses the phonon-assisted relaxation and reduces carrier traps, resulting in the increase of PL intensity. The decreased traps of photo-induced electrons at surface defect states effectively facilitate the PICT efficiency within the substrate–molecule system. An ultrahigh enhancement factor of 7.7 × 10(5) and low limit of detection (1 × 10(−7) M) for a 4-mercaptopyridine molecule at a temperature of 77 K are successfully obtained. More importantly, the low temperature-enhanced SERS effect is also obtainable in other metal oxide semiconductors, such as d-TiO(2) and d-Cu(2)O nanoparticles. To the best of our knowledge, this is the first time the low temperature-boosted SERS activity of semiconductors has been observed. This study not only provides a deep insight into the chemical SERS mechanism, but also develops a novel strategy for improving semiconductor SERS sensitivity. The strong SERS activity at a low temperature reported here may open new avenues for developing non-metal SERS substrates with new functionalities, especially for the research on cryogenic sensing and hypothermal medicine. The Royal Society of Chemistry 2020-08-13 /pmc/articles/PMC8162034/ /pubmed/34094207 http://dx.doi.org/10.1039/d0sc02712j Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by-nc/3.0/
spellingShingle Chemistry
Lin, Jie
Yu, Jian
Akakuru, Ozioma Udochukwu
Wang, Xiaotian
Yuan, Bo
Chen, Tianxiang
Guo, Lin
Wu, Aiguo
Low temperature-boosted high efficiency photo-induced charge transfer for remarkable SERS activity of ZnO nanosheets
title Low temperature-boosted high efficiency photo-induced charge transfer for remarkable SERS activity of ZnO nanosheets
title_full Low temperature-boosted high efficiency photo-induced charge transfer for remarkable SERS activity of ZnO nanosheets
title_fullStr Low temperature-boosted high efficiency photo-induced charge transfer for remarkable SERS activity of ZnO nanosheets
title_full_unstemmed Low temperature-boosted high efficiency photo-induced charge transfer for remarkable SERS activity of ZnO nanosheets
title_short Low temperature-boosted high efficiency photo-induced charge transfer for remarkable SERS activity of ZnO nanosheets
title_sort low temperature-boosted high efficiency photo-induced charge transfer for remarkable sers activity of zno nanosheets
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8162034/
https://www.ncbi.nlm.nih.gov/pubmed/34094207
http://dx.doi.org/10.1039/d0sc02712j
work_keys_str_mv AT linjie lowtemperatureboostedhighefficiencyphotoinducedchargetransferforremarkablesersactivityofznonanosheets
AT yujian lowtemperatureboostedhighefficiencyphotoinducedchargetransferforremarkablesersactivityofznonanosheets
AT akakuruoziomaudochukwu lowtemperatureboostedhighefficiencyphotoinducedchargetransferforremarkablesersactivityofznonanosheets
AT wangxiaotian lowtemperatureboostedhighefficiencyphotoinducedchargetransferforremarkablesersactivityofznonanosheets
AT yuanbo lowtemperatureboostedhighefficiencyphotoinducedchargetransferforremarkablesersactivityofznonanosheets
AT chentianxiang lowtemperatureboostedhighefficiencyphotoinducedchargetransferforremarkablesersactivityofznonanosheets
AT guolin lowtemperatureboostedhighefficiencyphotoinducedchargetransferforremarkablesersactivityofznonanosheets
AT wuaiguo lowtemperatureboostedhighefficiencyphotoinducedchargetransferforremarkablesersactivityofznonanosheets