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Distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum
In this paper, we show that electron states formed in topological insulators at the interfaces topological phase–trivial phase and topological phase–vacuum may possess different properties. This is demonstrated on an example of heterostructures based on thick topological Hg(1−x)Cd(x)Te films, in whi...
Autores principales: | , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8172881/ https://www.ncbi.nlm.nih.gov/pubmed/34079020 http://dx.doi.org/10.1038/s41598-021-91141-2 |
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author | Kazakov, A. S. Galeeva, A. V. Artamkin, A. I. Ikonnikov, A. V. Ryabova, L. I. Dvoretsky, S. A. Mikhailov, N. N. Bannikov, M. I. Danilov, S. N. Khokhlov, D. R. |
author_facet | Kazakov, A. S. Galeeva, A. V. Artamkin, A. I. Ikonnikov, A. V. Ryabova, L. I. Dvoretsky, S. A. Mikhailov, N. N. Bannikov, M. I. Danilov, S. N. Khokhlov, D. R. |
author_sort | Kazakov, A. S. |
collection | PubMed |
description | In this paper, we show that electron states formed in topological insulators at the interfaces topological phase–trivial phase and topological phase–vacuum may possess different properties. This is demonstrated on an example of heterostructures based on thick topological Hg(1−x)Cd(x)Te films, in which the PT-symmetric terahertz photoconductivity is observed. It is shown that the effect originates from features of the interface topological film–trivial buffer/cap layer. The PT-symmetric terahertz photoconductivity is not provided by electron states formed at the interface topological film–vacuum. |
format | Online Article Text |
id | pubmed-8172881 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-81728812021-06-04 Distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum Kazakov, A. S. Galeeva, A. V. Artamkin, A. I. Ikonnikov, A. V. Ryabova, L. I. Dvoretsky, S. A. Mikhailov, N. N. Bannikov, M. I. Danilov, S. N. Khokhlov, D. R. Sci Rep Article In this paper, we show that electron states formed in topological insulators at the interfaces topological phase–trivial phase and topological phase–vacuum may possess different properties. This is demonstrated on an example of heterostructures based on thick topological Hg(1−x)Cd(x)Te films, in which the PT-symmetric terahertz photoconductivity is observed. It is shown that the effect originates from features of the interface topological film–trivial buffer/cap layer. The PT-symmetric terahertz photoconductivity is not provided by electron states formed at the interface topological film–vacuum. Nature Publishing Group UK 2021-06-02 /pmc/articles/PMC8172881/ /pubmed/34079020 http://dx.doi.org/10.1038/s41598-021-91141-2 Text en © The Author(s) 2021 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Article Kazakov, A. S. Galeeva, A. V. Artamkin, A. I. Ikonnikov, A. V. Ryabova, L. I. Dvoretsky, S. A. Mikhailov, N. N. Bannikov, M. I. Danilov, S. N. Khokhlov, D. R. Distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum |
title | Distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum |
title_full | Distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum |
title_fullStr | Distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum |
title_full_unstemmed | Distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum |
title_short | Distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum |
title_sort | distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8172881/ https://www.ncbi.nlm.nih.gov/pubmed/34079020 http://dx.doi.org/10.1038/s41598-021-91141-2 |
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