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Structural and optical properties of amorphous Si–Ge–Te thin films prepared by combinatorial sputtering

The lack of order in amorphous chalcogenides offers them novel properties but also adds increased challenges in the discovery and design of advanced functional materials. The amorphous compositions in the Si–Ge–Te system are of interest for many applications such as optical data storage, optical sen...

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Autores principales: Mihai, C., Sava, F., Simandan, I. D., Galca, A. C., Burducea, I., Becherescu, N., Velea, A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8175571/
https://www.ncbi.nlm.nih.gov/pubmed/34083613
http://dx.doi.org/10.1038/s41598-021-91138-x
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author Mihai, C.
Sava, F.
Simandan, I. D.
Galca, A. C.
Burducea, I.
Becherescu, N.
Velea, A.
author_facet Mihai, C.
Sava, F.
Simandan, I. D.
Galca, A. C.
Burducea, I.
Becherescu, N.
Velea, A.
author_sort Mihai, C.
collection PubMed
description The lack of order in amorphous chalcogenides offers them novel properties but also adds increased challenges in the discovery and design of advanced functional materials. The amorphous compositions in the Si–Ge–Te system are of interest for many applications such as optical data storage, optical sensors and Ovonic threshold switches. But an extended exploration of this system is still missing. In this study, magnetron co-sputtering is used for the combinatorial synthesis of thin film libraries, outside the glass formation domain. Compositional, structural and optical properties are investigated and discussed in the framework of topological constraint theory. The materials in the library are classified as stressed-rigid amorphous networks. The bandgap is heavily influenced by the Te content while the near-IR refractive index dependence on Ge concentration shows a minimum, which could be exploited in applications. A transition from a disordered to a more ordered amorphous network at 60 at% Te, is observed. The thermal stability study shows that the formed crystalline phases are dictated by the concentration of Ge and Te. New amorphous compositions in the Si–Ge–Te system were found and their properties explored, thus enabling an informed and rapid material selection and design for applications.
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spelling pubmed-81755712021-06-07 Structural and optical properties of amorphous Si–Ge–Te thin films prepared by combinatorial sputtering Mihai, C. Sava, F. Simandan, I. D. Galca, A. C. Burducea, I. Becherescu, N. Velea, A. Sci Rep Article The lack of order in amorphous chalcogenides offers them novel properties but also adds increased challenges in the discovery and design of advanced functional materials. The amorphous compositions in the Si–Ge–Te system are of interest for many applications such as optical data storage, optical sensors and Ovonic threshold switches. But an extended exploration of this system is still missing. In this study, magnetron co-sputtering is used for the combinatorial synthesis of thin film libraries, outside the glass formation domain. Compositional, structural and optical properties are investigated and discussed in the framework of topological constraint theory. The materials in the library are classified as stressed-rigid amorphous networks. The bandgap is heavily influenced by the Te content while the near-IR refractive index dependence on Ge concentration shows a minimum, which could be exploited in applications. A transition from a disordered to a more ordered amorphous network at 60 at% Te, is observed. The thermal stability study shows that the formed crystalline phases are dictated by the concentration of Ge and Te. New amorphous compositions in the Si–Ge–Te system were found and their properties explored, thus enabling an informed and rapid material selection and design for applications. Nature Publishing Group UK 2021-06-03 /pmc/articles/PMC8175571/ /pubmed/34083613 http://dx.doi.org/10.1038/s41598-021-91138-x Text en © The Author(s) 2021 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Mihai, C.
Sava, F.
Simandan, I. D.
Galca, A. C.
Burducea, I.
Becherescu, N.
Velea, A.
Structural and optical properties of amorphous Si–Ge–Te thin films prepared by combinatorial sputtering
title Structural and optical properties of amorphous Si–Ge–Te thin films prepared by combinatorial sputtering
title_full Structural and optical properties of amorphous Si–Ge–Te thin films prepared by combinatorial sputtering
title_fullStr Structural and optical properties of amorphous Si–Ge–Te thin films prepared by combinatorial sputtering
title_full_unstemmed Structural and optical properties of amorphous Si–Ge–Te thin films prepared by combinatorial sputtering
title_short Structural and optical properties of amorphous Si–Ge–Te thin films prepared by combinatorial sputtering
title_sort structural and optical properties of amorphous si–ge–te thin films prepared by combinatorial sputtering
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8175571/
https://www.ncbi.nlm.nih.gov/pubmed/34083613
http://dx.doi.org/10.1038/s41598-021-91138-x
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